Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs) (IEC 47E/43/CDV:1996)
€69.91
Blank detail specification: Thyristor diodes, transient overvoltage suppressor; German version EN 150014:1996
€56.17
Discrete semiconductor devices - Semiconductor pressure sensors (IEC 47E/42/CDV:1996)
€140.00
Semiconductor devices - Requirements for resistance to dissolution of metallization on surface mounting (SMD) (IEC 47/1390/CD:1995)
€48.79
Draft IEC 60747-6: Semiconductor devices - Discrete devices and integrated circuits - Part 6: Thyristors (IEC 47E/38/CDV-I:1996)
Draft IEC 747-6: Semiconductor devices - Discrete devices and integrated circuits - Part 6: Thyristors (IEC 47E/38/CDV-II:1996)
€63.27
Semiconductor devices, mechanical standardization - Wire-ended diode package (small signal diode), package outline A54 in IEC 191-2 (IEC 47D(Sec)30:1994)
€41.78
Pin 1 mark for identification in automatic handling systems (IEC 47D/53/CD:1994)
Semiconductor devices; additional essential ratings and characteristics for microwave field effect transistors into IEC 60747-4 (IEC 47E(Secretariat)3:1993)
Semiconductor devices; revised and additional measuring methods for microwave field effect transistors; amendment to IEC 47(Central Office)1261 (IEC 47E(Secretariat)4:1993)
Semiconductor devices; measuring methods for thyristors; revision of IEC 747-6, chapter IV (IEC 47(Secretariat)1322:1993)
€91.03
Semiconductor devices; supplement to IEC 60747-7: bipolar transistors, pulse methods for collector-base cutt-off current and emitter-base cutt-off current (IEC 47E(Secretariat)5:1993)
Semiconductor devices; additional ratings and characteristics and measuring methods for power switching bipolar transistors (IEC 47(Secretariat)1275:1992)
Semiconductor devices; amendments of the rules for subscripts and indication of polarity (IEC 47(Central Office)1336:1992)
€34.30
Semiconductor devices - Visual inspection of discrete semiconductor devices (IEC 47E(Secretariat)6:1994)
€214.30
