Blank detail specification - Case-rated thyristors; German version EN 150011:1991
€48.79
Blank detail specification - Single gate field-effect transistors; German version EN 150012:1991
€105.42
Blank detail specification - Current regulator and current reference diodes; German version EN 150013:1991
Blank detail specification - Unidirectional transient overvoltage suppressor diodes; German version EN 150015:1992
€41.78
Blank detail specification: Ambient-rated thyristors; German version EN 150010:1991
€56.17
Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM) (IEC 47/1803/CDV:2005); German version prEN 60749-26:2005
€77.20
Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge (ESD) sensitivity testing - Machine model (MM) (IEC 47/1804/CDV:2005); German version prEN 60749-27:2005
Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability (IEC 60749-21:2004); German version EN 60749-21:2005.
€98.32
Mechanical standardization of semiconductor devices - Part 1: General rules for the preparation of outline drawings of discrete devices (IEC 47D/607A/CD:2005)
€122.34
Semiconductor devices - Part 1: General (IEC 47/1734/CD:2003)
Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test (IEC 60749-29:2003); German version EN 60749-29:2003 + Corrigendum:2004.
Microelectromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 47/1759/CD:2004)
€69.91
Microelectromechanical devices - Part 3: Thin film standard test piece (IEC 47/1760/CD:2004)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 26 : essai de sensibilité aux décharges électrostatiques (DES) - Modèle du corps humain (HBM)
€158.33
Semiconductor devices - Discrete devices - Blank detail specification for microwave field-effect transistors (IEC 47E/27/CDV:1995)
