Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics (Withdrawn 2023)
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Discrete semiconductor devices Metal-oxide field-effect transistors (MOSFETs) for power switching applications
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Semiconductor devices Discrete devices. Insulated-gate bipolar transistors (IGBTs)
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Printed electronics Quality assessment. Test method of displacement current measurement for printed thin-film transistor
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BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) Part 1. Fast BTI Test method
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Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) Fast BTI MOSFET
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Semiconductor devices. Discrete devices Bipolar transistors
Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications
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Harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for case-rated field-effect transistors for switching applications
Semiconductor devices. Hot carrier test on MOS transistors
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Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
Semiconductor devices. Discrete devices Insulated-gate bipolar transistors (IGBTs)
BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) Part 1. Fast BTI Test method
Semiconductor devices. Discrete devices Microwave diodes and transistors
