31.080 : Semiconductor devices

31.080.01

Semiconductor devices in general

31.080.10

Diodes

31.080.20

Thyristors

31.080.30

Transistors

31.080.99

Other semiconductor devices
IEC 60749-23:2004+AMD1:2011 Consolidated

IEC 60749-23:2004+AMD1:2011 Consolidated

Superseded Historical

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

€94.00

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IEC 60749-23:2004/AMD1:2011

IEC 60749-23:2004/AMD1:2011

Superseded Historical

Amendment 1 - Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

€11.00

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ASTM F996-11(2018)

ASTM F996-11(2018)

Withdrawn Most Recent

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics (Withdrawn 2023)

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ASTM F996-11

ASTM F996-11

Superseded Historical

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

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ASTM F1893-11

ASTM F1893-11

Superseded Historical

Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices

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IEC 60747-15:2010

IEC 60747-15:2010

Superseded Historical

Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices

€176.00

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BS EN 60745-2-2:2003+A12:2009

BS EN 60745-2-2:2003+A12:2009

Superseded Historical

Semiconductor devices Magnetic and capacitive coupler for basic reinforced insulation

€193.00

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DIN EN 60747-3:2010-11

DIN EN 60747-3:2010-11

Withdrawn Most Recent

Semiconductor devices - Part 3: Signal (including switching diodes) and regulator diodes (IEC 47E/395/CD:2010)

€157.10

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IEC 60749-15:2010

IEC 60749-15:2010

Superseded Historical

Semiconductor devices - Mechanical and climatic test methods - Part 15: Resistance to soldering temperature for through-hole mounted devices

€22.00

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DIN EN 62047-14:2010-10

DIN EN 62047-14:2010-10

Superseded Historical

Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials (IEC 47F/59/CD:2010)

€98.32

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DIN IEC 62047-11:2010-06

DIN IEC 62047-11:2010-06

Superseded Historical

Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for linear thermal expansion coefficients of MEMS materials (IEC 47F/49/CD:2010)

€91.03

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ASTM F996-10

ASTM F996-10

Superseded Historical

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

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DIN IEC 62047-12:2010-05

DIN IEC 62047-12:2010-05

Superseded Historical

Semiconductor devices - Micro-electromechanical devices - Part 12: A method for fatigue testing thin film materials using the resonant vibration of a MEMS structure (IEC 47F/43/CD:2010)

€111.40

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DIN IEC 62047-10:2010-05

DIN IEC 62047-10:2010-05

Superseded Historical

Semiconductor devices - Micro-electromechanical devices - Part 10: Micropillar compression test for MEMS materials (IEC 47F/48/CD:2010)

€69.91

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DIN IEC 62047-13:2010-05

DIN IEC 62047-13:2010-05

Superseded Historical

Semiconductor devices - Micro electro mechanical devices - Part 13: Bend- and shear- test methods of measuring adhesive strength for MEMS structures (IEC 47F/44/CD:2010)

€69.91

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