31.080 : Semiconductor devices

31.080.01

Semiconductor devices in general

31.080.10

Diodes

31.080.20

Thyristors

31.080.30

Transistors

31.080.99

Other semiconductor devices
UTE C96-010, C96-010U (08/1989)

UTE C96-010, C96-010U (08/1989)

Withdrawn Most Recent

Composants électroniques - Dispositifs à semiconducteurs - Dixième partie : spécification générique pour les dispositifs discrets et les circuits intégrés

€101.00

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UTE C96-009, C96-009U (08/1989)

UTE C96-009, C96-009U (08/1989)

Withdrawn Most Recent

Composants électroniques - Dispositifs à semiconducteurs - Essais mécaniques et climatiques

€101.00

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UTE C96-085, C96-085U (08/1989)

UTE C96-085, C96-085U (08/1989)

Withdrawn Most Recent

Composants électroniques - Dispositifs à semiconducteurs - Dispositifs discrets - Septième partie : transistors bipolaires - Section un - Spécification particulière cadre pour les transistors bipolaires à température ambiante spécifiée pour amplification en basse et haute fréquences

€77.67

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NF C86-010/A2 (07/1989)

NF C86-010/A2 (07/1989)

Withdrawn Most Recent

Composants électroniques - Système CENELEC d'assurance de la qualité - Dispositifs discrets à semiconducteurs - Spécification générique.

€95.67

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NF C96-313 (07/1989)

NF C96-313 (07/1989)

Withdrawn Most Recent

Dispositifs hyperfréquences - Amplificateurs à faible et moyenne puissance

€126.00

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IEC 60747-2-1:1989

IEC 60747-2-1:1989

Withdrawn Most Recent

Semiconductor devices - Discrete devices - Part 2: Rectifier diodes - Section One: Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A

€44.00

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IEC 60747-6-1:1989

IEC 60747-6-1:1989

Withdrawn Most Recent

Semiconductor devices - Discrete devices - Part 6: Thyristors - Section One: Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, up to 100 A

€88.00

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DIN IEC 47(CO)1116:1989-05

DIN IEC 47(CO)1116:1989-05

Withdrawn Most Recent

Semiconductor devices; amendment to the generic specification IEC 60747-10; accelerated test procedures; identical with IEC 47/47A(Central Office)1116/205

€34.30

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DIN IEC 47(CO)1074:1989-05

DIN IEC 47(CO)1074:1989-05

Withdrawn Most Recent

Semiconductor devices - Measuring methods for forward recovery time of rectifier diodes and signal diodes; Identical with IEC 47(Central Office)1074

€34.30

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DIN IEC 47(CO)985:1989-04

DIN IEC 47(CO)985:1989-04

Withdrawn Most Recent

IEC quality assessment system for electronic components: blank detail specification for bipolar transistors for switching applications; identical with IEC 47(Central Office)985

€56.17

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DIN IEC 47(CO)1084:1989-04

DIN IEC 47(CO)1084:1989-04

Superseded Historical

Semiconductor devices; mechanical and climatic test methods; amendment to IEC 60749; identical with IEC 47(Central Office)1084

€34.30

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DIN IEC 47(CO)1092:1989-04

DIN IEC 47(CO)1092:1989-04

Withdrawn Most Recent

Semiconductor devices; amendment to the generic specification; IEC 60747-10/QC 700000; identical with IEC 47(Central Office)1092

€34.30

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IEC 60747-7-1:1989

IEC 60747-7-1:1989

Withdrawn Most Recent

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section One: Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification

€88.00

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IEC 60747-7-2:1989

IEC 60747-7-2:1989

Withdrawn Most Recent

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section Two: Blank detail specification for case-rated bipolar transistors for low-frequency amplification

€88.00

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BS 3934:Addendum No. 6:1989

BS 3934:Addendum No. 6:1989

Superseded Historical

Mechanical standardization of semiconductor devices

€269.00

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