31.080 : Semiconductor devices

31.080.01

Semiconductor devices in general

31.080.10

Diodes

31.080.20

Thyristors

31.080.30

Transistors

31.080.99

Other semiconductor devices
DIN IEC 47(Sec)1227:1991-10

DIN IEC 47(Sec)1227:1991-10

Superseded Historical

Semiconductor devices; amendment of IEC 60749 climatic-mechanical test methods; new clause 7: mechanical test methods for SMD devices; identical with IEC 47(Secretariat)1227

€41.78

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DIN IEC 47(CO)1290:1991-10

DIN IEC 47(CO)1290:1991-10

Withdrawn Most Recent

Semiconductor devices; pulse breakdown voltage, term and definition (of a Gunn diode); identical with IEC 47(Central Office)1290

€34.30

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IEC 60748-21-1:1991

IEC 60748-21-1:1991

Superseded Historical

Semiconductor devices - Integrated circuits - Part 21; Section One: Blank detail specification for film integrated circuits and hybrid film integrated circuits on the basis of qualification approval procedure.

€44.00

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DIN IEC 47(CO)1187:1991-09

DIN IEC 47(CO)1187:1991-09

Withdrawn Most Recent

Semiconductor devices; amendment of testgroups B5, C5 and C7 of IEC 747-11; identical with IEC 47(Central Office)1187

€34.30

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IEC 60747-1:1983/AMD1:1991

IEC 60747-1:1983/AMD1:1991

Superseded Historical

Amendment 1 - Semiconductor devices - Discrete devices and integrated circuits - Part 1: General

€127.00

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IEC 60747-7-4:1991

IEC 60747-7-4:1991

Withdrawn Most Recent

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section Four: Blank detail specification for case-rated bipolar transistors for high-frequency amplification

€127.00

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IEC 60747-7-3:1991

IEC 60747-7-3:1991

Withdrawn Most Recent

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section three: Blank detail specification for bipolar transistors for switching applications

€127.00

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DIN IEC 47(CO)1230:1991-08

DIN IEC 47(CO)1230:1991-08

Withdrawn Most Recent

Semiconductor devices; measurement of coplanarity of the leads; identical with IEC 47(Central Office)1230

€34.30

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DIN IEC 47(CO)1117:1991-08

DIN IEC 47(CO)1117:1991-08

Withdrawn Most Recent

IEC-Q-quality assessment system for electronic components; capability approval procedure; identical with IEC 47(Central Office)1117

€56.17

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DIN IEC 47(CO)1127:1991-08

DIN IEC 47(CO)1127:1991-08

Withdrawn Most Recent

Semiconductor devices; rules for the indication of the polarity of currents and voltages; identical with IEC 47/47A(Central Office)1127/214

€41.78

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DIN IEC 47(CO)1169:1991-08

DIN IEC 47(CO)1169:1991-08

Superseded Historical

Semiconductor devices; amendment to IEC 60749: gross leak test; identical with IEC 47(Central Office)1169

€34.30

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DIN IEC 47(CO)1170:1991-08

DIN IEC 47(CO)1170:1991-08

Superseded Historical

Semiconductor devices; amendment to IEC 60749; external visual inspection; identical with IEC 47(Central Office)1170

€34.30

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DIN IEC 47(CO)1186:1991-08

DIN IEC 47(CO)1186:1991-08

Superseded Historical

Semiconductor devices; sealing test Q for semiconductor devices; identical with IEC 47(Central Office)1186

€34.30

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IEC 60747-8:1984/AMD1:1991

IEC 60747-8:1984/AMD1:1991

Superseded Historical

Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

€44.00

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DIN IEC 60747-8-1:1991-07

DIN IEC 60747-8-1:1991-07

Withdrawn Most Recent

Semiconductor devices - Field-effect transistors; Section one: Blank detail specification for single-gate field-effect tramsistors up to 5 W and 1 GHz; Identical with IEC 60747-8-1:1987

€84.58

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