Amendment 2 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
€44.00
Amendment 2 - Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes
€11.00
Semiconductor devices - Discrete devices - Part 6: Thyristors - Section Three: Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 A
€88.00
Semiconductor devices - Discrete devices - Part 2: Rectifier diodes - Section 2: Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
Amendment 2 - Semiconductor devices - Discrete devices - Part 2: Rectifier diodes
€22.00
Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
€231.00
Semiconductor devices; new and revised concepts for field effect transistors in IEC 60747-1 and IEC 60747-8 (IEC 47(Secretariat)1317:1993)
€41.78
Semiconductor devices; amendment to IEC 60747-11: sectional specification for discrete semiconductor devices (IEC 47(Secretariat)1318:1993)
Semiconductor devices; measuring the turn-off behaviour of GTO-thyristors (IEC 47(Secretariat)1319:1993)
Amendment 2 - Semiconductor devices - Discrete devices and integrated circuits - Part 1: General
€286.00
Amendment 2 - Semiconductor devices. Integrated circuits. Part 1: General
Amendment 2 - Semiconductor devices - Mechanical and climatic test methods.
Semiconductor devices; assessment of quality levels in PPM; identical with IEC 47(Central Office)1338:1992
€34.30
Semiconductor devices; insulated-gate bipolar transistors; terms and definitions; identical with IEC 60047(Central Office)1339:1992
Semiconductor devices; additional concepts for field-effect transistors; identical with IEC 47(Secretariat)1312:1993
