31.080 : Semiconductor devices

31.080.01

Semiconductor devices in general

31.080.10

Diodes

31.080.20

Thyristors

31.080.30

Transistors

31.080.99

Other semiconductor devices
ASTM E722-04

ASTM E722-04

Superseded Historical

Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics

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ASTM E1161-03

ASTM E1161-03

Superseded Historical

Standard Test Method for Radiologic Examination of Semiconductors and Electronic Components

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ASTM F1190-99(2005)

ASTM F1190-99(2005)

Superseded Historical

Standard Guide for Neutron Irradiation of Unbiased Electronic Components

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ASTM E722-04e1

ASTM E722-04e1

Superseded Historical

Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics

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ASTM F1192-00(2006)

ASTM F1192-00(2006)

Superseded Historical

Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices

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ASTM F1892-06

ASTM F1892-06

Superseded Historical

Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices

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ASTM F1190-11

ASTM F1190-11

Superseded Historical

Standard Guide for Neutron Irradiation of Unbiased Electronic Components

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ASTM F1192-11

ASTM F1192-11

Superseded Historical

Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices

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ASTM E1161-09

ASTM E1161-09

Superseded Historical

Standard Practice for Radiologic Examination of Semiconductors and Electronic Components

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ASTM E722-09

ASTM E722-09

Superseded Historical

Standard Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics

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ASTM F996-11

ASTM F996-11

Superseded Historical

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

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ASTM F1893-11

ASTM F1893-11

Superseded Historical

Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices

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ASTM E427-95(2006)

ASTM E427-95(2006)

Withdrawn Most Recent

Standard Practice for Testing for Leaks Using the Halogen Leak Detector(Alkali-Ion Diode) (Withdrawn 2013)

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ASTM E722-04e2

ASTM E722-04e2

Superseded Historical

Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics

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24/30501951 DC:2024

24/30501951 DC:2024

Active Most Recent

BS EN IEC 60749-26 Semiconductor devices - Mechanical and climatic test methods Part 26: Electrostatic discharge (ESD) sensitivity testing Human body model (HBM)

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