Guide for the Radiation Testing of Semiconductor Memories (Withdrawn 1993)
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Test Method for Small-Signal Scattering Parameters of Low-Power Transistors in the 0.2 to 2.0 GHZ Frequency Range (Withdrawn 1997)
Test Method for Determining the Mean Interface Trap Density of Mosfets by Charge-Pumping (Withdrawn 1997)
Standard Test Method for Measuring Transistor and Diode Leakage Currents (Withdrawn 2006)
Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics
Standard Test Method for Radiologic Examination of Semiconductors and Electronic Components
Standard Test Method for Calibration of Helium Leak Detectors by Use of Secondary Standards (Withdrawn 2008)
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
Standard Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics
Harmonized system of quality assessment for electronic components. Blank detail specification: Thyristor diodes, transient overvoltage suppressors
€193.00
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: light emitting diodes and infrared emitting diodes for fibre optic system or sub-system
