31.080 : Semiconductor devices

31.080.01

Semiconductor devices in general

31.080.10

Diodes

31.080.20

Thyristors

31.080.30

Transistors

31.080.99

Other semiconductor devices
DIN IEC 47E/120/CDV:1999-02

DIN IEC 47E/120/CDV:1999-02

Withdrawn Most Recent

Sensor generals and classification for semiconductor sensors (IEC 47E/120/CDV:1998)

€56.17

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DIN IEC 47E/121/CDV:1999-02

DIN IEC 47E/121/CDV:1999-02

Withdrawn Most Recent

Semiconductor devices - Discrete devices - Hall elements (IEC 47E/121/CDV:1998)

€56.17

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IEC 62007-1:1997+AMD1:1998 Consolidated

IEC 62007-1:1997+AMD1:1998 Consolidated

Superseded Historical

Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Essential ratings and characteristics

€506.00

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ASTM F1190-99

ASTM F1190-99

Superseded Historical

Standard Guide for Neutron Irradiation of Unbiased Electronic Components

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ASTM F1190-99(2005)

ASTM F1190-99(2005)

Superseded Historical

Standard Guide for Neutron Irradiation of Unbiased Electronic Components

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ASTM F1190-93

ASTM F1190-93

Superseded Historical

Standard Guide for Neutron Irradiation of Unbiased Electronic Components

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DIN IEC 47E/114/CDV:1998-10

DIN IEC 47E/114/CDV:1998-10

Withdrawn Most Recent

Amendment 1 to IEC 60747-9: Insulated gate bipolar transistors (IGBTs) (IEC 47E/114/CDV:1998)

€91.03

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IEC 60947-4-2:1995/AMD2:1998

IEC 60947-4-2:1995/AMD2:1998

Superseded Historical

Amendment 2 - Low-voltage switchgear and controlgear - Part 4: Contactors and motor-starters - Section 2: AC semiconductor motor controllers and starters

€11.00

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IEC 60747-9:1998

IEC 60747-9:1998

Superseded Historical

Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

€231.00

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IEC 62007-2:1997/AMD1:1998

IEC 62007-2:1997/AMD1:1998

Superseded Historical

Amendment 1 - Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods

€22.00

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IEC 62007-1:1997/AMD1:1998

IEC 62007-1:1997/AMD1:1998

Superseded Historical

Amendment 1 - Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Essential ratings and characteristics

€22.00

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UTE C96-028, C96-028U (06/1998)

UTE C96-028, C96-028U (06/1998)

Withdrawn Most Recent

Dispositifs à semi-conducteurs - Procédures pour la certification d'une ligne de fabrication et la gestion de la qualité et guide pour l'obtention de la certification QML - Prescriptions provisoires.

€111.67

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ASTM F996-98(2003) (R1998)

ASTM F996-98(2003) (R1998)

Superseded Historical

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

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ASTM F996-98

ASTM F996-98

Superseded Historical

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

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ASTM F1893-98

ASTM F1893-98

Superseded Historical

Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices

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