Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 2: Determination of Oxygen impurities in Nitrogen, Argon, Helium, Neon and Hydrogen using a galvanic cell
€48.79
Test Method for Crystallographic Perfection of Epitaxial Deposits of Silicon by Etching Techniques (Withdrawn 1998)
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Test Method for Detection of Oxidation Induced Defects in Polished Silicon Wafers (Withdrawn 1998)
Test Method for Stacking Fault Density of Epitaxial Layers of Silicon by Interference-Contrast Microscopy (Withdrawn 1998)
Method for Preparing Monocrystalline Test Ingots of Silicon by the Vertical-Pulling (Czochralski) Technique (Withdrawn 1988)
Practice for Preparing Silicon Single Crystals by the Floating-Zone Technique for Evaluation of Polysilicon Ingot (Withdrawn 1996)
Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption
Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption (Withdrawn 1992)
Method for Measurement of Oxide Thickness on Silicon Wafers and Metallization Thickness by Multiple-Beam Interference (Tolansky Method) (Withdrawn 1993)
Practice for Cleaning Surfaces of Polished Silicon Slices (Withdrawn 1993)
Test Method for Wafer and Slice Flatness by Interferometric (Withdrawn 1991)
Test Method for Using Computer-Assisted Infrared Spectrophotometry to Measure the Interstitial Oxygen Content of Silicon Slices Polished on Both Sides (Withdrawn 1993)
Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4: Determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS)
€69.91
Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 1: Silicium monocrystals, gravimetric method
Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 2: Silicium-dioxid coating, optical method
€41.78
