Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for low-frequency amplification
€193.00
Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A
€165.00
Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Reverse blocking triode thyristors, ambient and case-rated, up to 100 A
Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes
Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Signal diodes, switching diodes and controlled avalanche diodes
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz
Semiconductor devices. Discrete devices Recommendations for bipolar transistors
€404.00
Specification for letter symbols for semiconductor devices and integrated microcircuits
€269.00
Semiconductor devices. Discrete devices Recommendations for rectifier diodes
€374.00
Semiconductor devices. Discrete devices Recommendations for thyristors
Thermal standardization on semiconductor packages 3D thermal simulation models of for steady-state analysis. Discrete
BS EN IEC 60749-21 Semiconductor devices. Mechanical and climatic test methods Part 21. Solderability
€23.00
BS EN IEC 63550-4 Semiconductor devices. Neuromorphic devices Evaluation method of asymmetry in neuromorphic memristor
