31.080.01 : Semiconductor devices in general

22/30451588 DC:2022

22/30451588 DC:2022

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BS EN 63150-3 Ed.1.0. Semiconductor devices. Measurement and evaluation methods of kinetic energy harvesting devices under practical vibration environment Part 3. Human foot impact motion

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23/30469010 DC:2023

23/30469010 DC:2023

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BS EN IEC 63378-3. Thermal standardization on semiconductor packages Part 3. circuit simulation models of discrete for transient analysis

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23/30473272 DC:2023

23/30473272 DC:2023

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BS IEC 60747-5-4 AMD 1. Semiconductor devices Part 5-4. Optoelectronic devices. lasers

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23/30477062 DC:2023

23/30477062 DC:2023

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BS EN IEC 62007-2. Semiconductor optoelectronic devices for fibre optic system applications Part 2. Measuring methods

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BS 7302:1990

BS 7302:1990

Withdrawn Most Recent

Specification for microprocessor universal format object modules

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24/30497538 DC:2024

24/30497538 DC:2024

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BS EN IEC 60749-7 Semiconductor devices. Mechanical and climatic test methods Part 7. Internal moisture content measurement the analysis of other residual gases

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24/30497546 DC:2024

24/30497546 DC:2024

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BS EN IEC 60749-24 Semiconductor devices. Mechanical and climatic test methods Part 24. Accelerated moisture resistance. Unbiased HAST

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BS EN IEC 60749-5:2024

BS EN IEC 60749-5:2024

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Semiconductor devices. Mechanical and climatic test methods Steady-state temperature humidity bias life

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23/30472390 DC:2023

23/30472390 DC:2023

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BS EN 60747-16-11 Semiconductor devices Part 16-11. Microwave integrated circuits - Power detectors

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23/30478757 DC:2023

23/30478757 DC:2023

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BS EN IEC 63287-3. Semiconductor devices. Generic semiconductor qualification guidelines Part 3. Guidelines for reliability plans power module

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24/30491834 DC:2024

24/30491834 DC:2024

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Draft BS EN 60747-14-12 ED1 Semiconductor devices Part 14-12: sensors - Performance test methods for CMOS imager-based gas

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24/30492188 DC:2024

24/30492188 DC:2024

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Draft BS EN 63378-6 ED1. Thermal standardization on semiconductor packages Part 6. resistance and capacitance model for transient temperature prediction at junction measurement points

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24/30497109 DC:2024

24/30497109 DC:2024

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BS EN IEC 63068-5 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Part 5. Test method using X-ray topography

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BS 3939-5:1985

BS 3939-5:1985

Superseded Historical

Graphical symbols for electrical power, telecommunications and electronics diagrams Semiconductors electron tubes

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BS 4727-1:Group 05:1985

BS 4727-1:Group 05:1985

Withdrawn Most Recent

Glossary of electrotechnical, power, telecommunication, electronics, lighting and colour terms. Terms common to telecommunications electronics Semiconductor terminology

€269.00

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