31.080.01 : Semiconductor devices in general

24/30501951 DC:2024

24/30501951 DC:2024

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BS EN IEC 60749-26 Semiconductor devices - Mechanical and climatic test methods Part 26: Electrostatic discharge (ESD) sensitivity testing Human body model (HBM)

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24/30502824 DC:2024

24/30502824 DC:2024

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BS EN IEC 60749-22-1 Semiconductor devices - Mechanical and climatic test methods Part 22-1: Bond strength wire bond pull

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24/30502907 DC:2024

24/30502907 DC:2024

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BS EN IEC 60749-22-2 Semiconductor devices - Mechanical and climatic test methods Part 22-2: Bond strength Wire bond shear

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24/30506674 DC:2024

24/30506674 DC:2024

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BS EN IEC 63287-4 Semiconductor devices - Guidelines for reliability qualification plans Part 4: Early failure assessment

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25/30509883 DC:2025

25/30509883 DC:2025

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Draft BS EN 63608-1 Semiconductor devices - Reliability evaluation methods for vibration energy harvesters Part 1: Mechanical reliability under shock

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25/30509887 DC:2025

25/30509887 DC:2025

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Draft BS EN 63492-1 Semiconductor devices - Isolation for semiconductor Part 1: Failure mechanisms and measurement methods to evaluate solid insulation

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25/30510059 DC:2025

25/30510059 DC:2025

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BS EN IEC 63378-2-2 Thermal standardization on semiconductor packages Part 2-2: 3D thermal simulation models of for steady-state analysis - PBGA and FBGA

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ASTM E431-96(2007)

ASTM E431-96(2007)

Superseded Historical

Standard Guide to Interpretation of Radiographs of Semiconductors and Related Devices

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25/30510337 DC:2025

25/30510337 DC:2025

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Draft BS EN 63378-4 Thermal standardization on semiconductor packages Part 4. evaluation board specifications for fine pitch

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25/30513132 DC:2025

25/30513132 DC:2025

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BS EN IEC 63068-5 Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power Part 5: Test method using X-ray topography

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25/30511533 DC:2025

25/30511533 DC:2025

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Draft BS EN 63378-6-1 Thermal standardization on semiconductor packages Part 6-1. resistance and capacitance model for transient temperature prediction at junction measurement points. Model creation method using a datasheet of device

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ASTM F1892-12

ASTM F1892-12

Superseded Historical

Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices

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ASTM E431-96(2011)

ASTM E431-96(2011)

Superseded Historical

Standard Guide to Interpretation of Radiographs of Semiconductors and Related Devices

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ASTM E1161-09(2014)

ASTM E1161-09(2014)

Superseded Historical

Standard Practice for Radiologic Examination of Semiconductors and Electronic Components

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25/30461045 DC:2025

25/30461045 DC:2025

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Draft BS EN 63464-1 Medical electrical equipment Particular requirements for the basic safety and essential performance of neutron capture therapy

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