Additif 2 à la publication UTE C 86-812 de juin 1976
€43.67
Semiconductor devices - Recommendations for data sheets - Voltage reference and voltage regulator diodes
€24.39
Composants électroniques - Transistors bipolaires à température de boîtier spécifiée pour amplification basse fréquence - Recueil de spécifications particulières.
Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
€165.00
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
Practice for Determining Safe Current Pulse Operating Regions for Metallization on Semiconductor Components (Withdrawn 1995)
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Test Method for Small-Signal Scattering Parameters of Low-Power Transistors in the 0.2 to 2.0 GHZ Frequency Range (Withdrawn 1997)
Rules for the preparation of detail specifications for semiconductor devices of assessed quality. Voltage reference diodes
Supplement E - Essential ratings and characteristics et semiconductor devices and general principles of measuring methods - Part 0: General and terminology
€176.00
Supplement L - Essential ratings and characteristics of semiconductor devices and general principles of measuring methods - Part 2: General principles of measuring methods - Chapter 6: Digital integrated circuits
€286.00
Supplement B - Letter symbols for semiconductor devices and integrated microcircuits
€44.00
Semiconducteurs - Transistors bipolaires en hyperfréquences - Recueil de spécifications particulières.
€86.50
Composants électroniques - Diodes de redressement à température ambiante spécifiée - Recueil de spécifications particulières.
€59.33
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
