31.080 : Semiconductor devices

31.080.01

Semiconductor devices in general

31.080.10

Diodes

31.080.20

Thyristors

31.080.30

Transistors

31.080.99

Other semiconductor devices
IEC 60191-3D:1988

IEC 60191-3D:1988

Superseded Historical

Mechanical standardization of semiconductor devices - Part 3: General rules for the preparation of outline drawings of integrated circuits - Fourth supplement

€22.00

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DIN IEC 47(CO)1052:1988-08

DIN IEC 47(CO)1052:1988-08

Withdrawn Most Recent

Semiconductor devices; terminology; electrostatic-discharge-sensitive; identical with IEC 47(Central Office)1052

€34.30

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DIN IEC 47(CO)1072:1988-08

DIN IEC 47(CO)1072:1988-08

Withdrawn Most Recent

Semiconductor devices; concept of power-gain compression for GaAs F.E.T.; identical with IEC 47(Central Office)1072

€34.30

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DIN IEC 47(CO)1077:1988-08

DIN IEC 47(CO)1077:1988-08

Superseded Historical

Semiconductor devices; recovered charge; terminology; identical with IEC 47(Central Office)1077

€34.30

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DIN IEC 47(CO)1043:1988-07

DIN IEC 47(CO)1043:1988-07

Withdrawn Most Recent

Semiconductor devices; terms and letter symbols for GaAs F.E.T. used in microwave applications; identical with IEC 47(Central Office)1043

€34.30

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NF C96-316 (07/1988)

NF C96-316 (07/1988)

Withdrawn Most Recent

Dispositifs hyperfréquences - Circulateurs - Isolateurs

€153.00

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NF C86-010/A1 (06/1988)

NF C86-010/A1 (06/1988)

Withdrawn Most Recent

Composants électroniques - Système CENELEC d'assurance de la qualité - Dispositifs discrets à semiconducteurs - Spécification générique

€198.33

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UTE C96-310, C96-310U (06/1988)

UTE C96-310, C96-310U (06/1988)

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Dispositifs hyperfréquences - Procédures d'agrément de savoir-faire pour les dispositifs hyperfréquences - Prescriptions provisoires

€111.67

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ASTM F815-88(1993)e1

ASTM F815-88(1993)e1

Withdrawn Most Recent

Test Method for Detection of Epitaxial Spikes (Withdrawn 1999)

This product is not for sale, please contact us for more information

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IEC 60191-2P:1988

IEC 60191-2P:1988

Withdrawn Most Recent

Fourteenth supplement

€286.00

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IEC 60747-8-1:1987

IEC 60747-8-1:1987

Withdrawn Most Recent

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section One: Blank detail specification for single-gate field-effect transistors up to 5 W and 1 GHz

€127.00

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NF C86-612/A2 (11/1987)

NF C86-612/A2 (11/1987)

Withdrawn Most Recent

Composants électroniques - Système CENELEC d'assurance de la qualité - Transistors bipolaires à température ambiante spécifiée pour amplification en basse et haute fréquences - Spécification particulière cadre (changement de statut de NF C 86-612, juin 1976, ENR.).

€34.00

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NF C86-812/A1 (11/1987)

NF C86-812/A1 (11/1987)

Withdrawn Most Recent

Additif 1 à la norme NF C 86-812 de juin 1981

€34.00

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NF C86-712/A2 (11/1987)

NF C86-712/A2 (11/1987)

Withdrawn Most Recent

Additif 2 à la norme NF C 86-712 de juin 1981

€34.00

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BS QC 750005:1987

BS QC 750005:1987

Withdrawn Most Recent

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes

€165.00

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