Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 1: Carbon in gallium arsenide
€48.79
Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semiconductor slices using a capacitive probe
€41.78
Testing of materials for semiconductor technology - Measurement of carrier lifetime in silicon single crystals - Recombination carrier lifetime at low injection by photoconductivity method
Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
€34.30
Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile
Testing of materials for semiconductor technology - Method for the characterisation of moulding compounds for electronic components - Part 2: Determination of ionic impurities using pressure cooker test
Testing of materials for semiconductor technology - Contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method
Testing of materials for semiconductor technology - Determination of impurity content in silicon by infrared absorption - Part 1: Oxygen
€56.17
Testing of materials for semiconductor technology; contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method
Testing of materials for semiconductor technology; measurement of carrier lifetime in silicon single crystals; recombination carrier lifetime at low injection by photo conductive decay method
Testing of materials for semiconductor technology; recognition of defects and inhomogeneities in semiconductor single crystals by X-ray topography; III-V-semiconductor compounds
Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation
Testing of materials for semiconductor technology - Determination of traces of metals in liquids - Part 3: Al, Co, Cu, Na, Ni and Zn in nitric acid with ICP-MS
Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 2: Indium phosphide
