IEEE P3465

New IEEE Standard - Active - Draft.


The standard specifies a method to verify the Magnetic Immunity (MI) of Magnetoresistive Random Access Memory (MRAM), in both discrete and embedded random access memory integrated circuit environments. In particular, measurement conditions are defined to evaluate the maximum static magnetic field allowed, in order to meet a prescribed bit error rate (BER), or number of errors per MRAM operation. MRAM operations include "read," "write," "power-off," and "stand-by." As a vectorial quantity, recommended maximum static field may be described as a function of angular orientation with respect to an integrated circuit substrate, or in terms of a worst-case angle, is determined by theory based on the magnetostatic free energy of an MRAM device. Measurements may be made on packaged MRAM integrated chips and MRAM on unpackaged substrate wafers alike. The verification results may be used to define the maximum static field allowed in order to meet the bit error rate is defined in an MRAM suppliers specifications sheet (data sheet).
This standard provides a consensus-based method for the verification and validation of magnetic immunity in magnetoresistive random access memory.