Active
Standard
Most Recent
IEC 63284:2022
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
Preview
Summary
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress
Technical characteristics
| Publisher | International Electrotechnical Commission (IEC) |
| Publication Date | 04/21/2022 |
| Release Date | 04/21/2022 |
| Edition | 1 |
| Page Count | 25 |
| Themes | Quality assurance |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
No products.
Previous versions
No products.