IEC 60747-9:2019
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IEC 60747-9:2019

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

Summary

IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:
  1. reverse-blocking IGBT and its related technical contents have been added;
  2. reverse-conducting IGBT and its related technical contents have been added;
  3. some parts of the previous edition have been amended, combined or deleted.

Technical characteristics

Publisher International Electrotechnical Commission (IEC)
Publication Date 11/13/2019
Release Date 11/13/2019
Edition 3
Page Count 160
EAN ---
ISBN ---
Weight (in grams) ---
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