Surface chemical analysis — Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy
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Surface chemical analysis — X-ray photoelectron spectroscopy — Reporting of methods used for charge control and charge correction
Surface chemical analysis — Secondary-ion mass spectrometry — Method for estimating depth resolution parameters with multiple delta-layer reference materials
Surface chemical analysis — Information format for static secondary-ion mass spectrometry
Surface chemical analysis — X-ray photoelectron and Auger electron spectrometers — Linearity of intensity scale
Surface chemical analysis — Depth profiling — Measurement of sputtering rate: mesh-replica method using a mechanical stylus profilometer
Gas analysis — Preparation of calibration gas mixtures using dynamic volumetric methods Part 4: Continuous syringe injection method
Gas analysis — Preparation of calibration gas mixtures using dynamic volumetric methods Part 8: Diffusion method
Gas analysis — Investigation and treatment of analytical bias
Surface chemical analysis — Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy Amendment 1
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
Surface chemical analysis — Scanning probe microscopy — Standards on the definition and calibration of spatial resolution of electrical scanning probe microscopes (ESPMs) such as SSRM and SCM for 2D-dopant imaging and other purposes
Surface Chemical Analysis — Atomic force microscopy — Procedure for in situ characterization of AFM probe shank profile used for nanostructure measurement
Gas mixtures — Gravimetric preparation — Mastering correlations in composition Technical Corrigendum 1
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Gas analysis — Vocabulary
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