NF C86-816/A1 (06/1981)

NF C86-816/A1 (06/1981)

Withdrawn Most Recent

Additif 1 à la norme NF C 86-816 de juin 1976 (homologuée en juin 1981)

€32.33

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NF C86-812 (06/1981)

NF C86-812 (06/1981)

Withdrawn Most Recent

Composants électroniques - Système CENELEC d'assurance de la qualité - Diodes à semiconducteurs d'usage général pour signal ou commutation - Spécification particulière cadre

€59.33

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UTE C86-812/A3, C86-812/A3U (01/1981)

UTE C86-812/A3, C86-812/A3U (01/1981)

Withdrawn Most Recent

Additif 3 à la publication UTE C 86-812 de juin 1976

€34.00

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NF EN 62572-3, C93-882-3 (09/2014)

NF EN 62572-3, C93-882-3 (09/2014)

Superseded Historical

Composants et dispositifs actifs en fibres optiques - Normes de fiabilité - Partie 3 : modules laser utilisés pour les télécommunications

€109.00

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DIN IEC 60747-2:1989-08

DIN IEC 60747-2:1989-08

Superseded Historical

Semiconductor devices; discrete devices and integrated circuits; rectifier diodes; identical with IEC 60747-2:1983

€111.40

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DIN IEC 47(CO)1181:1991-01

DIN IEC 47(CO)1181:1991-01

Withdrawn Most Recent

Semiconductor devices - Measuring methods for avalanche and controlled-avalanche rectifier diodes; Identical with IEC 47(Central Office)1181

€41.78

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DIN IEC 47(CO)1123:1991-06

DIN IEC 47(CO)1123:1991-06

Withdrawn Most Recent

Semiconductor devices; IMPATT-diodes, -diode amplifiers and -diode oscillators, terms and letter symbols; identical with IEC 47(Central Office)1123

€34.30

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DIN IEC 47(CO)1191:1991-10

DIN IEC 47(CO)1191:1991-10

Withdrawn Most Recent

Semiconductor devices; measuring methods for threshold voltage and resistance of Gunn diodes; identical with IEC 47(Central Office)1191

€34.30

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DIN IEC 47(CO)1290:1991-10

DIN IEC 47(CO)1290:1991-10

Withdrawn Most Recent

Semiconductor devices; pulse breakdown voltage, term and definition (of a Gunn diode); identical with IEC 47(Central Office)1290

€34.30

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DIN IEC 60747-3-1:1991-11

DIN IEC 60747-3-1:1991-11

Withdrawn Most Recent

Semiconductor devices - Discrete devices - Part 3: Signal diodes and regulator diodes; Section one: Blank detail specification: Signal diodes, switching diodes and controlled-avalanche diodes; Identical with IEC 60747-3-1:1986

€56.17

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DIN IEC 60747-3-2:1992-04

DIN IEC 60747-3-2:1992-04

Withdrawn Most Recent

Semiconductor devices - Part 3: Signal diodes and regulator diodes; Section two: Blank detail specification for voltage-regulator diodes and voltage reference diodes; Identical with IEC 60747-3-2:1986

€56.17

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DIN IEC 47(CO)1251:1992-05

DIN IEC 47(CO)1251:1992-05

Withdrawn Most Recent

Semiconductor devices; measuring method of the excess carrier effective life time of diodes for fast switching applications; identical with IEC 47(Central Office)1251

€34.30

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DIN IEC 47(CO)1280:1992-05

DIN IEC 47(CO)1280:1992-05

Withdrawn Most Recent

Semiconductor devices; measuring method for threshold voltage V of Gunn-diodes; identical with IEC 47(Central Office)1280

€34.30

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DIN IEC 47(CO)1222:1992-07

DIN IEC 47(CO)1222:1992-07

Withdrawn Most Recent

Semiconductor devices; concepts for voltage-reference and voltage-regulator diodes; identical with IEC 47(Central Office)1222

€34.30

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DIN IEC 47(CO)1279:1992-08

DIN IEC 47(CO)1279:1992-08

Withdrawn Most Recent

Semiconductor devices; blank detail specification for rectifier diodes for currents greater than 100 A; identical with IEC 47(Central Office)1279.

€48.79

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