Detail specification for silicon n-p-n planar transistor intended for low level, low noise amplifier applications
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Rules for the preparation of detail specifications for semiconductor devices of assessed quality: general purpose signal diodes
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: switching diodes
Rules for the preparation of detail specifications for semiconductor devices of assessed quality. Voltage reference diodes
This product is not for sale, please contact us for more information
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: voltage regulator diodes
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: low current rectifier diodes (up to 3 ampere rating)
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: medium current rectifier diodes (1-100 ampere rating)
Detail specification for medium current rectifier diodes. 3 A, 300 V, 600 V, 900 V, 1200 V, hermetically sealed. Full assessment level
€165.00
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: high current rectifier diodes (greater than 50 ampere rating)
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: controlled avalanche rectifier diodes
General lighting - Light emitting diode (LED) products and related equipment - Terms and definitions - Eclairage général - Produits à diode électroluminescente (LED) et équipements associés - Termes et définitions
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General lighting - Light emitting diode (LED) products and related equipment - Terms and definitions - Éclairage général
€87.39
Organic light emitting diode displays - Part 1-2 : terminology and letter symbols
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LED modules for general lighting - Safety specifications - Modules de DEL pour éclairage général
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Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier diodes (IEC 60747-2:2000)
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