Detail specification for silicon voltage regulator diodes
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€165.00
Detail specification for silicon n-p-n planar transistor intended for low level, low noise amplifier applications
€269.00
Detail specification for silicon voltage-regulator diodes
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave mixer diodes (pulse operation)
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave detector diodes
Detail specifications for silicon power rectifier diodes
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: high current rectifier diodes (greater than 50 ampere rating)
Supplement B - Essential ratings and characteristics of semiconductor devices and general principles of measuring methods - Part 2: General principles of measuring methods
€231.00
Supplement C - Essential ratings and characteristics of semiconductor devices and general principles of measuring methods - Part 2: General principles of measuring methods
€286.00
Essential ratings and characteristics of semiconductor devices and general principles of measuring methods - Part 3: Reference methods of measurement
€88.00
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: voltage regulator diodes
