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IEC TS 62607-6-27:2025
IEC TS 62607-6-27:2025 Nanomanufacturing - Key control characteristics - Part 6-27: Graphene-related products - Field-effect mobility for layers of two-dimensional materials: field-effect transistor method
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Summary
IEC TS 62607-6-27:2025, which is a Technical Specification, establishes a standardized method to determine the key control characteristic
• field-effect mobility
for semiconducting two-dimensional (2D) materials by the
• field-effect transistor (FET) method.
For two-dimensional semiconducting materials, the field-effect mobility is determined by fabricating a FET test structure and measuring the transconductance in a four-terminal configuration.
- This method can be applied to layers of semiconducting two-dimensional materials, such as graphene, black phosphorus (BP), molybdenum disulfide (MoS2), molybdenum ditelluride (MoTe2), tungsten disulfide (WS2), and tungsten diselenide (WSe2).
- The four-terminal configuration improves accuracy by eliminating parasitic effects from the probe contacts and cables
• field-effect mobility
for semiconducting two-dimensional (2D) materials by the
• field-effect transistor (FET) method.
For two-dimensional semiconducting materials, the field-effect mobility is determined by fabricating a FET test structure and measuring the transconductance in a four-terminal configuration.
- This method can be applied to layers of semiconducting two-dimensional materials, such as graphene, black phosphorus (BP), molybdenum disulfide (MoS2), molybdenum ditelluride (MoTe2), tungsten disulfide (WS2), and tungsten diselenide (WSe2).
- The four-terminal configuration improves accuracy by eliminating parasitic effects from the probe contacts and cables
Technical characteristics
| Publisher | International Electrotechnical Commission (IEC) |
| Publication Date | 12/16/2025 |
| Edition | 1.0 |
| Page Count | 19 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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