IEC 63068-2:2019
Active Standard
Most Recent

IEC 63068-2:2019

IEC 63068-2:2019 Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

Summary

IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

Technical characteristics

Publisher International Electrotechnical Commission (IEC)
Publication Date 01/30/2019
Edition 1.0
Page Count 25
EAN ---
ISBN ---
Weight (in grams) ---
No products.
No products.
No products.
Contact us