Detail specification for multi-contact edge socket electrical connectors. Single or double sided, open ended, guide key location, replaceable contacts, through-board solder or wire wrap terminations. Full assessment level
€269.00
Methods for specifying and measuring the characteristics of sound system equipment Amplifiers
Rules for the preparation of detail specifications for capacitively coupled digital integrated circuits of assessed quality. Full assessment level
€165.00
Specification for metal-clad base materials printed circuits Flexible copper-clad polyester (PETP) film: PETP-F-Cu-9
€193.00
Methods of measuring and expressing the performance television receivers General considerations electrical measurements other than those at audio-frequencies
€404.00
Specification for rotary (manual) switches of assessed quality: generic data and methods of test; general rules for the preparation of detail specifications
Methods for specifying and measuring the characteristics of sound system equipment Automatic gain control devices
Methods for specifying and measuring the characteristics of sound system equipment Artificial reverberation, time delay frequency shift
Harmonized system of quality assessment for electronic components: generic specification: dry reed make contact units
Specification for lever operated switches of assessed quality: generic data and methods of test; general rules for the preparation of detail specifications
€316.00
Detail specification for multi-contact edge socket electrical connectors. Single or double sided, open ended, metal fixing flanges, guide key location, replaceable contacts, through-board solder or wire wrap terminations. Full assessment level
Specification for electro-acoustical measuring equipment for aircraft noise certification
Specification for the calibration of hydrophones
€355.00
Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
