SME EE00-165

SME EE00-165

A 90 Ghz Amplifier Assembled Using Flip-Chip Technology

19,00 €

Detalles

This paper reports the performance of a novel W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's), and does not compromise frequency performance, at least up to 100 GHz.

Información adicional

Autor Society of Manufacturing Engineers
Publicado por SME
Tipo de Documento Norma
Tema /subgroups/9442
Número de páginas 10
Palabra clave SME EE00-165