Nombre | apoyo | Revisión | Disponibilidad | Fecha de emisión | Precio | ||
---|---|---|---|---|---|---|---|
PDF |
Inglés |
Vigente |
1/11/2000 |
19,00 € |
|
Detalles
This paper reports the performance of a novel W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's), and does not compromise frequency performance, at least up to 100 GHz.
Información adicional
Autor | Society of Manufacturing Engineers |
---|---|
Publicado por | SME |
Tipo de Documento | Norma |
Tema | /subgroups/9442 |
Número de páginas | 10 |
Palabra clave | SME EE00-165 |