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1/3/2016 |
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Detalles
This Standard was technically approved by the Silicon Wafer Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on February 1, 2016. Available at www.semiviews.org and www.semi.org in March 2016, originally published by ASTM International as ASTM F42-64T, previously published June 2011.
The determination of conductivity type and the presence of junctions in semiconductors is important in processing or inspection of semiconducting materials for device fabrication as well as in research and development.
This Test Method covers four procedures that are widely used for making routine measurements.
This Test Method covers the determination of the conductivity type of extrinsic semiconductors. While explicit details are given for germanium and silicon, inclusion of other extrinsic materials such as gallium arsenide and indium antimonide should be feasible. For the latter compounds, however, applicability has not been formally verified by round-robin tests. Determinations can be made most reliably on homogeneous bulk material, but these test methods may also be used to map regions of different conductivity type on the surfaces of inhomogeneous specimens. These test methods have not been tested on layered structures, such as epitaxial layers. Measurements on these structures may give erroneous indications of conductivity type.
Four test methods are described:
Test Method A — Hot-Probe Thermal EMF Conductivity-Type Test.
Test Method B — Cold-Probe Thermal EMF Conductivity-Type Test.
Test Method C — Point-Contact Rectification Conductivity-Type Test.
Test Method D — Type-All system operating in either of two modes:
Rectification Conductivity-Type Mode.
Thermal EMF Conductivity-Type Mode.
Experience has shown that Test Method A (hot-probe) gives dependable results in n- and p-type silicon having room-temperature resistivity up to 1000 Ω·cm.
Test Method B (cold-probe) gives dependable results for n- and p-type germanium having a room-temperature resistivity of 20 Ω·cm or less and for n- and p-type silicon having a resistivity up to 1000 Ω·cm (Note 1). This technique has the advantage over the hot-probe test method in that the signal amplitude can be increased by developing a greater temperature difference between the two probes.
Test Method C (rectification) is a simple convenient technique that gives dependable results for n- and p-type silicon with room-temperature resistivity between 1 and 1000 Ω·cm. This Test Method is not recommended for germanium.
Test Method D (type-all rectification mode) is appropriate for use on n- and p-type silicon having room-temperature resistivity between 0.1 and 1000 Ω·cm, inclusive.
Test Method D (type-all thermal emf mode) is appropriate for use on n- and p-type silicon having a room-temperature resistivity between 0.002 and 0.1 Ω·cm, inclusive.
These test methods may apply outside the limits given above, but their suitability outside these limits has not been verified experimentally.
It is recommended that if satisfactory results cannot be obtained with the use of these test methods that conductivity type be determined from Hall-effect measurements as described in ASTM F76.
Referenced SEMI Standards
SEMI M59 — Terminology for Silicon Technology
SEMI MF43 — Test Method for Resistivity of Semiconductor Materials
SEMI MF84 — Test Method for Measuring Resistivity of Silicon Slices with an In-Line Four-Point Probe
Información adicional
| Autor | Semiconductor Equipment and Materials Institute (SEMI) |
|---|---|
| Publicado por | SEMI |
| Tipo de Documento | Norma |
