| Nombre | apoyo | Revisión | Disponibilidad | Fecha de emisión | Precio | ||
|---|---|---|---|---|---|---|---|
|
PDF sécurisé |
Inglés |
Vigente |
1/6/2012 |
204,00 € |
|
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Detalles
Some silicon epitaxial wafers are supplied with buried layers under the epitaxial film. This Specification covers the properties of such epitaxial wafers that pertain to the buried layer.
This Specification defines the properties of silicon epitaxial wafers with buried layers that relate to the characteristics of photolithography, buried layer, and buried layer pattern after the deposition of the epitaxial layer.
This Specification is intended to be used with the polished wafer specification (SEMI M1) and the epitaxial wafer specification (SEMI M2), which define the properties of the substrate and the epitaxial layer, respectively.
Información adicional
| Autor | Semiconductor Equipment and Materials Institute (SEMI) |
|---|---|
| Publicado por | SEMI |
| Tipo de Documento | Norma |
| Fecha de confirmación | 2019-03-01 |
