SEMI E180-1219

SEMI E180-1219

Test Method for Measuring Surface Metal Contamination Through ICP-MS of Critical Chamber Components Used in Semiconductor Wafer Processing

204,00 €

Detalles

This Document describes a method for a quantitative analysis for surface trace-metal concentration of critical chamber components (CCCs) by using inductively coupled plasma-mass spectrometry (ICP-MS). This Standard is intended to promote communication between the users and the processing-equipment suppliers. It can be also used to facilitate better communication regarding surface metal-contamination expectation and its test method between the processing equipment suppliers and the CCC manufacturers.



This Document describes the procedure for trace-metal measurement, including the surface trace-metal collection from a CCC, as it influences the reliability of measurement data and reproducibility of each test facility.



The use of this Document is to ensure consistency in the reporting of results provided by each processing-equipment supplier or CCC manufacturer.



This Document applies to the measurement of surface trace-metal concentration of CCCs (e.g., showerheads, pedestals) by ICP-MS.



This Document applies to an unused CCC or its parts.



This Document covers local extraction and full-immersion trace-metal collection techniques.

Información adicional

Autor Semiconductor Equipment and Materials Institute (SEMI)
Publicado por SEMI
Tipo de Documento Norma