| Nombre | apoyo | Revisión | Disponibilidad | Fecha de emisión | Precio | ||
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PDF |
Inglés |
Vigente |
1/12/2018 |
77,00 € |
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Detalles
These guidelines apply to GaAs Monolithic Microwave Integrated Circuits (MMICs) and their individual component building blocks, such as GaAs Metal-Semiconductor Field Effect Transistors (MESFETs), Pseudomorphic High Electron Mobility Transistors (PHEMTs), Heterojunction Bipolar Transistors (HBTs), resistors, and capacitors. While the procedure described in this document may be applied to other semiconductor technologies, especially those used in RF and microwave frequency analog applications, it is primarily intended for technologies based on GaAs and related III-V material systems (InP, AlGaAs, InGaAs, InGaP, GaN, etc).
Información adicional
| Autor | JEDEC Solid State Technology Association |
|---|---|
| Publicado por | JEDEC |
| Tipo de Documento | Norma |
| Tema | /subgroups/36080 |
| Número de páginas | 28 |
| Reemplaza | JEDEC JEP118 |
| Palabra clave | JEDEC JEP118 |
