| Nombre | apoyo | Revisión | Disponibilidad | Fecha de emisión | Precio | ||
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PDF |
Inglés |
Vigente |
31/10/2018 |
115,00 € |
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Detalles
This document specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished samples and for instruments that incorporate an Al or Mg X-ray source, a sample stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this document, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.
Información adicional
| Autor | International Organization for Standardization (ISO) |
|---|---|
| Comité | ISO/TC 201/SC 7 |
| Publicado por | ISO |
| Tipo de Documento | Norma |
| Edición | 2 |
| ICS | 71.040.40 : Análisis químico
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| Número de páginas | 17 |
| Reemplaza | ISO 14701:2011 |
| Palabra clave | ISO 14701:2018 |
