| Nombre | apoyo | Revisión | Disponibilidad | Fecha de emisión | Precio | ||
|---|---|---|---|---|---|---|---|
|
Papel |
Inglés |
Disponible |
29/8/2014 |
72,32 € |
|
||
Detalles
Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost.
This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices.
With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC-DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors.
Información adicional
| Autor | Alex Lidow, Johan Strydom, Michael de Rooij, David Reusch |
|---|---|
| Publicado por | WILEY |
| Cubierta | Perfect Paperback |
| Tipo de Documento | Libro |
| Edición | 2 |
| EAN ISBN | 978-1-118-84476-2 |
| Número de páginas | 272 |
| Peso(kg.) | 0.5624 |
