| Name | Unterstützung | Language | Verfügbarkeit | Datum der Ausstellung | Preis | ||
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PDF |
Englisch |
gültig |
16.12.2025 |
133,00 € |
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Details
IEC TS 62607-6-27:2025, which is a Technical Specification, establishes a standardized method to determine the key control characteristic
• field-effect mobility
for semiconducting two-dimensional (2D) materials by the
• field-effect transistor (FET) method.
For two-dimensional semiconducting materials, the field-effect mobility is determined by fabricating a FET test structure and measuring the transconductance in a four-terminal configuration.
- This method can be applied to layers of semiconducting two-dimensional materials, such as graphene, black phosphorus (BP), molybdenum disulfide (MoS2), molybdenum ditelluride (MoTe2), tungsten disulfide (WS2), and tungsten diselenide (WSe2).
- The four-terminal configuration improves accuracy by eliminating parasitic effects from the probe contacts and cables
Zusätzliche Information
| Autor | International Electrotechnical Commission (IEC) |
|---|---|
| Komitee | TC 113 |
| Veröffentlicht von | IEC |
| Document type | Normen |
| Ausgabe | 1.0 |
| ICS | 07.120 : Nanotechnologie
|
| Seitenzahl | 19 |
| Schlagwort | IEC62607-6-27,IEC TS 62607-6-27:2025,IEC/TS 62607-6-27 |
