SEMI M65-0816

SEMI M65-0816

Specification for Sapphire Substrates to use for Compound Semiconductor Epitaxial Wafers

204,00 €

Détails

This Standard was technically approved by the Compound Semiconductor Materials Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on July 21, 2016. Available at www.semiviews.org and www.semi.org in August 2016, originally published March 2006, previously published August 2006.



Sapphire substrates are utilized for hetero-epitaxial growth of gallium nitride and related film. The properties of the films depend in part on the properties of the substrates used. This Specification is intended to provide specifications for the criteria necessary to use for growth of films suitable for device production, and to unify the notation method of sapphire substrate.



This Specification covers requirements for three sizes (50.8 mm, 76.2 mm, and 100 mm) of monocrystalline high-purity polished sapphire substrates. Dimensional and crystallographic orientation characteristics are the only standardized properties set forth herein. A purchase specification may require additional physical properties, which should be defined. Many of these properties are listed, together with test methods suitable for determining their magnitude. Additional information and recommended specification levels for several of these properties are provided in Related Information sections.



This Specification is directed specifically to sapphire substrates with one polished surface. Substrates polished on both sides, or unpolished, or with epitaxial film, are not covered, however, customers of such substrates will find that these specifications are useful guides in defining their requirements.



The notations of crystallographic orientation are unified to prevent possible misunderstandings. The symbols written by capital or small letters must be strictly used with distinction for the correct expression of a crystal plane.

Informations supplémentaires

Auteur Semiconductor Equipment and Materials Institute (SEMI)
Edité par SEMI
Type de document Norme