Nom | Support | Langue | Disponibilité | Date d'édition | Prix | ||
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PDF sécurisé |
Anglais |
Active |
01/02/2018 |
195,50 € |
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Détails
The purpose of this Document is to list, illustrate, and define various characters, features, and contaminants that are seen on highly polished GaAs wafers and present recommended practices for observation of these defects. These occurrences are frequently referred to as surface defects. The defects and common synonyms are arranged alphabetically in § 4, and each structure is referred to by its most common name and, in some cases, probably origins.
Two cases of surface preparations are considered in this Document: (1) surfaces after chemical polishing, and (2) mechanically and chemically polished surfaces.
This Standard may involve hazardous materials, operations, and equipment.
Informations supplémentaires
Auteur | Semiconductor Equipment and Materials Institute (SEMI) |
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Edité par | SEMI |
Type de document | Norme |