SEMI HB11-0819

SEMI HB11-0819

Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers

204,00 €

Détails

This Specification provides the characteristics of sapphire single crystal ingot, consisting of the physical specification, orientation, shape, and defect standard.



This Specification is the requirement for key parameters and the defects of sapphire single crystal ingots only used for manufacturing wafers for HB-LED applications.



The key parameters cover the ingot diameter, reference plane width, end face orientation, reference plane orientation, verticality, and roundness.



The defects which need to be deducted along the axial direction of the sapphire single crystal ingot, consist of bubbles and cloud, surface scratch, crack, and chip.

Informations supplémentaires

Auteur Semiconductor Equipment and Materials Institute (SEMI)
Edité par SEMI
Type de document Norme