Nom | Support | Langue | Disponibilité | Date d'édition | Prix | ||
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PDF sécurisé |
Anglais |
Active |
01/08/2019 |
204,00 € |
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Détails
This Specification provides the characteristics of sapphire single crystal ingot, consisting of the physical specification, orientation, shape, and defect standard.
This Specification is the requirement for key parameters and the defects of sapphire single crystal ingots only used for manufacturing wafers for HB-LED applications.
The key parameters cover the ingot diameter, reference plane width, end face orientation, reference plane orientation, verticality, and roundness.
The defects which need to be deducted along the axial direction of the sapphire single crystal ingot, consist of bubbles and cloud, surface scratch, crack, and chip.
Informations supplémentaires
Auteur | Semiconductor Equipment and Materials Institute (SEMI) |
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Edité par | SEMI |
Type de document | Norme |