| Nom | Support | Langue | Disponibilité | Date d'édition | Prix | ||
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PDF |
Anglais |
Active |
31/10/2019 |
63,00 € |
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Papier |
Anglais |
Active |
31/10/2019 |
79,00 € |
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Détails
New IEEE Standard - Active.
Supersedes IEEE C62.35-2010 and IEEE C62.35-2010/Cor1-2018. The basic electrical parameters to be met by silicon PN junction voltage clamping components used for the protection of telecommunications equipment or lines from surges are defined in this standard. It is intended that this standard be used for the harmonization of existing or future specifications issued by PN diode surge protective component manufacturers, telecommunication equipment manufacturers, administrations, or network operators.
This standard sets terms, test methods, test circuits, measurement procedures and preferred result values for diodes with one or more silicon PN-junctions used for surge voltage clamping in low-voltage systems.
The technology types covered are:
- Forward biased diodes
- Zener breakdown diodes
- Avalanche breakdown diodes
- Punch-through diodes
- Foldback diodes
Informations supplémentaires
| Auteur | Institute of Electrical and Electronics Engineers (IEEE) |
|---|---|
| Comité | Surge Protective Devices/Low Voltage |
| Edité par | IEEE |
| Type de document | Norme |
| Edition révision n° | 0 |
| EAN ISBN | 978-1-5044-6119-1 |
| ICS | 29.120.50 : Coupe-circuits à fusibles et autres dispositifs de protection contre les surint
31.080.10 : Diodes |
| Nombre de pages | 41 |
| Mot-clé | IEEE C62.59-2019 |
| Bon de commande |
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