IEC 63229:2021

IEC 63229:2021

IEC 63229:2021 Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

173,00 €

Détails

IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.

Informations supplémentaires

Auteur International Electrotechnical Commission (IEC)
Comité TC 47
Edité par IEC
Type de document Norme
Edition révision n° 1
ICS 31.080.99 : Autres dispositifs à semi-conducteurs
Nombre de pages 21
Mot-clé IEC63229,IEC 63229:2021,IEC 63229,TC 47