| Name | Support | Language | Availability | Edition date | Price | ||
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PDF |
English |
Active |
12/1/2018 |
€77.00 |
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Details
These guidelines apply to GaAs Monolithic Microwave Integrated Circuits (MMICs) and their individual component building blocks, such as GaAs Metal-Semiconductor Field Effect Transistors (MESFETs), Pseudomorphic High Electron Mobility Transistors (PHEMTs), Heterojunction Bipolar Transistors (HBTs), resistors, and capacitors. While the procedure described in this document may be applied to other semiconductor technologies, especially those used in RF and microwave frequency analog applications, it is primarily intended for technologies based on GaAs and related III-V material systems (InP, AlGaAs, InGaAs, InGaP, GaN, etc).
Additional Info
| Author | JEDEC Solid State Technology Association |
|---|---|
| Published by | JEDEC |
| Document type | Standard |
| Theme | /subgroups/36080 |
| Number of pages | 28 |
| Replace | JEDEC JEP118 |
| Keyword | JEDEC JEP118 |
