IEC 63275-2:2022

IEC 63275-2:2022

IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

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Details

IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

Additional Info

Author International Electrotechnical Commission (IEC)
Committee TC 47
Published by IEC
Document type Standard
Edition 1.0
ICS 31.080.30 : Transistors
Number of pages 20
Keyword IEC63275-2,IEC 63275-2:2022,IEC 63275-2,TC 47