Name | Support | Language | Availability | Edition date | Price | ||
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PDF |
English, French |
Active |
5/11/2022 |
€46.00 |
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Details
IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
Additional Info
Author | International Electrotechnical Commission (IEC) |
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Committee | TC 47 |
Published by | IEC |
Document type | Standard |
Edition | 1.0 |
ICS | 31.080.30 : Transistors
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Number of pages | 20 |
Keyword | IEC63275-2,IEC 63275-2:2022,IEC 63275-2,TC 47 |