IEC 63068-3:2020

IEC 63068-3:2020

IEC 63068-3:2020 Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

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Details

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

Additional Info

Author International Electrotechnical Commission (IEC)
Committee TC 47
Published by IEC
Document type Standard
Edition 1.0
ICS 31.080.99 : Other semiconductor devices
Number of pages 51
Keyword IEC63068-3,IEC 63068-3:2020,IEC 63068-3,TC 47