Name | Support | Language | Availability | Edition date | Price | ||
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PDF |
English, French |
Active |
4/22/2010 |
€23.00 |
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Details
IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
Additional Info
Author | International Electrotechnical Commission (IEC) |
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Committee | TC 47 |
Published by | IEC |
Document type | Standard |
Edition | 1.0 |
ICS | 31.080.30 : Transistors
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Number of pages | 16 |
Keyword | IEC62417,IEC 62417:2010,IEC 62417,TC 47 |