IEC 62417:2010

IEC 62417:2010

IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

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Details

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Additional Info

Author International Electrotechnical Commission (IEC)
Committee TC 47
Published by IEC
Document type Standard
Edition 1.0
ICS 31.080.30 : Transistors
Number of pages 16
Keyword IEC62417,IEC 62417:2010,IEC 62417,TC 47