IEC 60747-9:2019

IEC 60747-9:2019

IEC 60747-9:2019 Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

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Details

IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:

* reverse-blocking IGBT and its related technical contents have been added,
* reverse-conducting IGBT and its related technical contents have been added,
* some parts of the previous edition have been amended, combined or deleted.

Additional Info

Author International Electrotechnical Commission (IEC)
Committee TC 47/SC 47E
Published by IEC
Document type Standard
Edition 3.0
ICS 31.080.01 : Semiconductor devices in general
31.080.30 : Transistors
Number of pages 160
Replace IEC 60747-9:2007
Document history ,IEC 60747-9:2007
Keyword IEC60747-9,IEC 60747-9:2019,IEC 60747-9,TC 47/SC 47E