31.080 : Semiconductor devices

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  • JIS C 8158:2017

    Self-ballasted LED-lamps for general lighting services by voltage > 50 V
    12/20/2017 - PDF - Japanese -
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    €36.27

  • JIS C 8160:2017

    Non-integrated linear LED lamps with GX16t-5 cap for general lighting services
    12/20/2017 - PDF - Japanese -
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    €25.00

  • JIS C 5630-26:2017

    Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures
    10/20/2017 - PDF - Japanese -
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    €36.27

  • JIS C 5630-1:2017

    Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions
    3/21/2017 - PDF - Japanese -
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    €41.86

  • JIS C 6790:2016

    Load test of a bolt-clamped Langevin vibrator using wattmeter method
    3/22/2016 - PDF - Japanese -
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    €25.00

  • JIS C 5630-20:2015

    Semiconductor devices - Micro-electromechanical devices - Part 20: Gyroscopes
    11/20/2015 - PDF - Japanese -
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    €46.02

  • JIS C 5630-18:2014

    Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
    12/22/2014 - PDF - Japanese -
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    €25.00

  • JIS C 5630-13:2014

    Semiconductor devices - Micro-electromechanical devices - Part 13: Bend-and shear-type test methods of measuring adhesive strength for MEMS structures
    2/20/2014 - PDF - Japanese -
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    €25.00

  • JIS C 5630-12:2014

    Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
    2/20/2014 - PDF - Japanese -
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    €36.27

  • JIS B 9960-33:2012 (R2017)

    Safety of machinery - Electrical equipment of machines - Part 33: Requirements for semiconductor fabrication equipment
    5/21/2012 - PDF - Japanese -
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    €72.41

  • JIS C 8157:2011 (R2016)

    Self-ballasted LED-lamps for general lighting services > 50 V - Performance requirements
    12/20/2011 - PDF - Japanese -
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    €25.00

  • JIS C 5630-6:2011 (R2016)

    Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials
    8/22/2011 - PDF - Japanese -
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    €25.00

  • JIS C 5630-3:2009 (R2013)

    Semiconductor devices - Micro-electromechanical devices - Part 3: Thin film standard test piece for tensile testing
    3/20/2009 - PDF - Japanese -
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    €25.00

  • JIS C 5630-2:2009 (R2013)

    Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
    3/20/2009 - PDF - Japanese -
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    €25.00

  • JIS R 1660-3/ERRATUM 1:2007

    ERRATUM
    4/16/2007 - PDF - Japanese -
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    €0.00

  • JIS C 6114-2:2006 (R2015)

    Measuring method of optical modulator modules
    1/20/2006 - PDF - Japanese -
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    €25.00

  • JIS C 5381-341:2005 (R2014)

    Components for low-voltage surge protective devices - Part 341: Specification for thyristor surge suppressors (TSS)
    3/20/2005 - PDF - Japanese -
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    €50.18

  • JIS R 1660-3:2004 (R2013)

    Measurement method for dielectric properties of fine ceramics in millimeter wave frequency range - Part 3: Dielectric resonator method excited by NRD-guide
    3/20/2004 - PDF - Japanese -
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    €36.27

  • JIS R 1660-1:2004 (R2013)

    Measurement method for dielectric properties of fine ceramics in millimeter wave frequency range - Part 1: Cutoff waveguide method
    3/20/2004 - PDF - Japanese -
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    €36.27

  • JIS R 1660-2:2004 (R2013)

    Measurement method for dielectric properties of fine ceramics in millimeter wave frequency range - Part 2: Open resonator method
    3/20/2004 - PDF - Japanese -
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    €25.00

  • JIS R 1661:2004 (R2013)

    Method for conductivity measurement of ion-conductive fine ceramics
    3/20/2004 - PDF - Japanese -
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    €25.00

  • JIS C 5381-321:2004 (R2014)

    Components for low-voltage surge protective devices - Specifications for avalanche breakdown diode (ABD)
    3/20/2004 - PDF - Japanese -
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    €25.00

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