31.080.30 : Transistors
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UTE C86-614, C86-614U (02/1977)
Electronic components. Bipolar transistors for switching applications. Manual of detail specifications within the scope of the french standards NF C 86-010 and NF C 86-614 (CECC 50 000 and CECC 50 004). - Composants électroniques
2/1/1977 - Paper - French -
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UTE C86-614/A1, C86-614/A1U (04/1978)
ELECTRONIC COMPONENTS. BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS. COLLECTION OF DETAIL SPECIFICATION WITHIN THE SCOPE OF THE FRENCH STANDARDS NF C 86-010 AND NF C 86-614.
4/1/1978 - Paper - French -
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UTE C86-614/A2, C86-614/A2U (11/1978)
ELECTRONIC COMPONENTS. BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS. COLLECTION OF DETAIL SPECIFICATION WITHIN THE SCOPE OF THE FRENCH STANDARDS NF C 86-010 AND NF C 86-614.
11/1/1978 - Paper - French -
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€88.33
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€88.33
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€31.00
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UTE C86-614/A8, C86-614/A8U (05/1981)
ELECTRONIC COMPONENTS. BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS. COLLECTION OF DETAILS SPECIFICATIONS WITHIN THE SCOPE OF THE FRENCH STANDARDS NF C 86-010 AND NF C 86-614 (CECC 50 000 AND CECC 50 004).
5/1/1981 - Paper - French -
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€127.67
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BS EN 120003:1993
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays
11/15/1986 - PDF - English -
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€72.00
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BS EN 120004:1993
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Ambient rated photocouplers with phototransistor output
5/15/1988 - PDF - English -
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DIN 4000-19:1988-12
Tabular layouts of article characteristics for transistors and thyristors
12/1/1988 - PDF - German -
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NF C96-007 (06/1989) (R2014)
Semiconductor devices. Discrete devices and integrated circuits. Part 7 : bipolar transistors. - Composants électroniques
6/1/1989 - Paper - French -
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NF EN 120003, C93-120-003 (07/1992)
Blank detail specification : phototransistors, photodarlington transistors, phototransistor arrays
7/1/1992 - Paper - French -
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€50.18
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BS QC 750106:1993
Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications
7/15/1993 - PDF - English -
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UNE-EN 120003:1992
BDS: PHOTOTRANSISTORS, PHOTOCARLINGTON TRANSISTORS, PHOTOTRANSISTOR ARRAYS. (Endorsed by AENOR in September of 1996.)
9/1/1996 - PDF - English -
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UNE-EN 120004:1992
BDS: AMBIENT RATED PHOTOCOUPLERS WITH PHOTOTRANSISTORS OUTPUT. (Endorsed by AENOR in September of 1996.)
9/1/1996 - PDF - English -
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DIN EN 120003:1996-11
Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992
11/1/1996 - PDF - German -
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BS QC 750114:1996
Harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for case-rated field-effect transistors for switching applications
12/15/1996 - PDF - English -
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BS IEC 60747-8-4:2004
Discrete semiconductor devices Metal-oxide field-effect transistors (MOSFETs) for power switching applications
11/9/2004 - PDF - English -
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IEC 62373:2006
IEC 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
7/18/2006 - PDF - English, French -
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BS EN 62373:2006
Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
9/29/2006 - PDF - English -
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UNE-EN 62373:2006
Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)
11/1/2006 - PDF - English -
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DIN EN 62373:2007-01
Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
1/1/2007 - PDF - German -
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IEC 60747-4:2007
IEC 60747-4:2007 Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
8/23/2007 - PDF - English, French -
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IEC 62417:2010
IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
4/22/2010 - PDF - English, French -
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IEC 62416:2010
IEC 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
4/26/2010 - PDF - English, French -
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BS EN 62417:2010
Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
6/30/2010 - PDF - English -
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€151.00
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DIN EN 62416:2010-12
Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010), German version EN 62416:2010
12/1/2010 - PDF - German -
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IEC 60747-8:2010
IEC 60747-8:2010 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
12/15/2010 - PDF - English, French -
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IEC 60747-7:2010
IEC 60747-7:2010 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
12/16/2010 - PDF - English, French -
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IEEE/IEC 62860:2013
IEC/IEEE Test methods for the characterization of organic transistors and materials
7/30/2013 - PDF - English -
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IEEE/IEC 62860-1:2013
IEC/IEEE Test methods for the characterization of organic transistor-based ring oscillators
7/30/2013 - Paper - English -
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IEEE/IEC 62860:2013
IEC/IEEE Test methods for the characterization of organic transistors and materials
7/30/2013 - Paper - English -
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IEEE/IEC 62860-1:2013
IEC/IEEE Test methods for the characterization of organic transistor-based ring oscillators
7/30/2013 - PDF - English -
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IEC 60747-4:2007/AMD1:2017
IEC 60747-4:2007/AMD1:2017 Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
1/30/2017 - PDF - English, French -
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IEC 60747-4:2007+AMD1:2017 Edition 2.1
IEC 60747-4:2007+AMD1:2017 (Consolidated version) Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
1/30/2017 - PDF - English, French -
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17/30366375 DC:2017
BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) Part 1. Fast BTI Test method
11/30/2017 - PDF - English -
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18/30381548 DC:2018
BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) Part 1. Fast BTI Test method
8/3/2018 - PDF - English -
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IEC 60747-7:2010/AMD1:2019
IEC 60747-7:2010/AMD1:2019 Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
9/23/2019 - PDF - English, French -
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IEC 60747-7:2010+AMD1:2019 Edition 3.1
IEC 60747-7:2010+AMD1:2019 (Consolidated version) Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
9/23/2019 - PDF - English, French -
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€398.00
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IEC 60747-9:2019
IEC 60747-9:2019 Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
11/13/2019 - PDF - English, French -
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BS IEC 60747-9:2019
Semiconductor devices Discrete devices. Insulated-gate bipolar transistors (IGBTs)
11/22/2019 - PDF - English -
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20/30406234 DC:2020
BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Part 2. Test bipolar degradation by body diode operating
4/1/2020 - PDF - English -
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BS IEC 60747-4:2007+A1:2017
Semiconductor devices. Discrete devices Microwave diodes and transistors
5/26/2020 - PDF - English -
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IEC 62899-503-1:2020
IEC 62899-503-1:2020 Printed electronics - Part 503-1: Quality assessment - Test method of displacement current measurement for printed thin-film transistor
5/27/2020 - PDF - English -
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IEC 62373-1:2020
IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
7/15/2020 - PDF - English, French -
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BS IEC 62899-503-1:2020
Printed electronics Quality assessment. Test method of displacement current measurement for printed thin-film transistor
9/25/2020 - PDF - English -
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IEC 60747-8:2010+AMD1:2021 Edition 3.1
IEC 60747-8:2010+AMD1:2021 (Consolidated version) Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
6/25/2021 - PDF - English -
Learn More€558.00 -
IEC 60747-8:2010/AMD1:2021
IEC 60747-8:2010/AMD1:2021 Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
6/25/2021 - PDF - English -
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BS IEC 60747-8:2010+A1:2021
Semiconductor devices. Discrete devices Field-effect transistors
7/9/2021 - PDF - English -
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IEC 62899-503-3:2021
IEC 62899-503-3:2021 Printed electronics - Part 503-3: Quality assessment - Measuring method of contact resistance for the printed thin film transistor - Transfer length method
8/24/2021 - PDF - English -
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BS IEC 62899-503-3:2021
Printed electronics Quality assessment. Measuring method of contact resistance for the printed thin film transistor. Transfer length
9/8/2021 - PDF - English -
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NF EN IEC 63373, C96-373 (03/2022)
Lignes directrices pour les méthodes d'essai de résistance dynamique à l'état passant des dispositifs de conversion de puissance fondés sur les HEMT en GaN
3/1/2022 - Paper - French -
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IEC 63275-1:2022
IEC 63275-1:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
4/21/2022 - PDF - English, French -
Learn More€92.00 -
IEC 63284:2022
IEC 63284:2022 Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
4/21/2022 - PDF - English, French -
Learn More€92.00 -
IEC 63275-2:2022
IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
5/11/2022 - PDF - English, French -
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BS IEC 63275-1:2022
Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Test bias temperature instability
10/5/2022 - PDF - English -
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BS IEC 63284:2022
Semiconductor devices. Reliability test method by inductive load switching for gallium nitride transistors
11/11/2022 - PDF - English -
Learn More€180.00 -
BS IEC 62373-1:2020
Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) Fast BTI MOSFET
3/30/2023 - PDF - English -
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DIN EN IEC 63373:2023-08
Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices (IEC 63373:2022), German version EN IEC 63373:2022
8/1/2023 - PDF - German -
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