31.080.30 : Transistors

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  • UTE C86-614, C86-614U (02/1977)

    Electronic components. Bipolar transistors for switching applications. Manual of detail specifications within the scope of the french standards NF C 86-010 and NF C 86-614 (CECC 50 000 and CECC 50 004). - Composants électroniques
    2/1/1977 - Paper - French -
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    €88.33

  • UTE C86-614/A1, C86-614/A1U (04/1978)

    ELECTRONIC COMPONENTS. BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS. COLLECTION OF DETAIL SPECIFICATION WITHIN THE SCOPE OF THE FRENCH STANDARDS NF C 86-010 AND NF C 86-614.
    4/1/1978 - Paper - French -
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    €72.00

  • UTE C86-614/A2, C86-614/A2U (11/1978)

    ELECTRONIC COMPONENTS. BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS. COLLECTION OF DETAIL SPECIFICATION WITHIN THE SCOPE OF THE FRENCH STANDARDS NF C 86-010 AND NF C 86-614.
    11/1/1978 - Paper - French -
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    €116.50

  • UTE C86-614/A5, C86-614/A5U (08/1979)

    Additif 5 à la publication UTE C 86-614 de février 1977
    8/1/1979 - Paper - French -
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    €88.33

  • UTE C86-614/A6, C86-614/A6U (01/1980)

    Additif 6 à la publication UTE C 86-614 de février 1977
    1/1/1980 - Paper - French -
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    €88.33

  • UTE C86-614/A7, C86-614/A7U (01/1981)

    Additif 7 à la publication UTE C 86-614 de février 1977
    1/1/1981 - Paper - French -
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    €31.00

  • UTE C86-614/A8, C86-614/A8U (05/1981)

    ELECTRONIC COMPONENTS. BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS. COLLECTION OF DETAILS SPECIFICATIONS WITHIN THE SCOPE OF THE FRENCH STANDARDS NF C 86-010 AND NF C 86-614 (CECC 50 000 AND CECC 50 004).
    5/1/1981 - Paper - French -
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    €127.67

  • UTE C86-614/A9, C86-614/A9U (03/1986)

    Additif 9 à la publication UTE C 86-614 de février 1977
    3/1/1986 - Paper - French -
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    €127.67

  • BS EN 120003:1993

    Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays
    11/15/1986 - PDF - English -
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    €180.00

  • UTE C86-614/A10, C86-614/A10U (04/1987)

    Additif 10 à la publication UTE C 86-614 de février 1977
    4/1/1987 - Paper - French -
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    €72.00

  • BS EN 120004:1993

    Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Ambient rated photocouplers with phototransistor output
    5/15/1988 - PDF - English -
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    €250.00

  • DIN 4000-19:1988-12

    Tabular layouts of article characteristics for transistors and thyristors
    12/1/1988 - PDF - German -
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    €32.34

  • NF C96-007 (06/1989) (R2014)

    Semiconductor devices. Discrete devices and integrated circuits. Part 7 : bipolar transistors. - Composants électroniques
    6/1/1989 - Paper - French -
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    €219.33

  • NF EN 120003, C93-120-003 (07/1992)

    Blank detail specification : phototransistors, photodarlington transistors, phototransistor arrays
    7/1/1992 - Paper - French -
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    €88.00

  • JIS C 7030:1993 (R2014)

    Measuring methods for transistors
    2/1/1993 - PDF - Japanese -
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    €50.18

  • BS QC 750106:1993

    Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications
    7/15/1993 - PDF - English -
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    €180.00

  • UNE-EN 120003:1992

    BDS: PHOTOTRANSISTORS, PHOTOCARLINGTON TRANSISTORS, PHOTOTRANSISTOR ARRAYS. (Endorsed by AENOR in September of 1996.)
    9/1/1996 - PDF - English -
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    €46.00

  • UNE-EN 120004:1992

    BDS: AMBIENT RATED PHOTOCOUPLERS WITH PHOTOTRANSISTORS OUTPUT. (Endorsed by AENOR in September of 1996.)
    9/1/1996 - PDF - English -
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    €60.00

  • DIN EN 120003:1996-11

    Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992
    11/1/1996 - PDF - German -
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    €52.90

  • BS QC 750114:1996

    Harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for case-rated field-effect transistors for switching applications
    12/15/1996 - PDF - English -
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    €180.00

  • BS IEC 60747-8-4:2004

    Discrete semiconductor devices Metal-oxide field-effect transistors (MOSFETs) for power switching applications
    11/9/2004 - PDF - English -
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    €348.00

  • IEC 62373:2006

    IEC 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
    7/18/2006 - PDF - English, French -
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    €92.00

  • BS EN 62373:2006

    Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
    9/29/2006 - PDF - English -
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    €180.00

  • UNE-EN 62373:2006

    Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)
    11/1/2006 - PDF - English -
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    €60.00

  • DIN EN 62373:2007-01

    Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
    1/1/2007 - PDF - German -
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    €65.89

  • IEC 60747-4:2007

    IEC 60747-4:2007 Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
    8/23/2007 - PDF - English, French -
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    €460.00

  • IEC 62417:2010

    IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
    4/22/2010 - PDF - English, French -
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    €23.00

  • IEC 62416:2010

    IEC 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
    4/26/2010 - PDF - English, French -
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    €46.00

  • BS EN 62417:2010

    Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
    6/30/2010 - PDF - English -
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    €151.00

  • BS EN 62416:2010

    Semiconductor devices. Hot carrier test on MOS transistors
    7/31/2010 - PDF - English -
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    €151.00

  • DIN EN 62416:2010-12

    Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010), German version EN 62416:2010
    12/1/2010 - PDF - German -
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    €72.80

  • IEC 60747-8:2010

    IEC 60747-8:2010 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
    12/15/2010 - PDF - English, French -
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    €397.00

  • IEC 60747-7:2010

    IEC 60747-7:2010 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
    12/16/2010 - PDF - English, French -
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    €431.00

  • IEEE/IEC 62860:2013

    IEC/IEEE Test methods for the characterization of organic transistors and materials
    7/30/2013 - PDF - English -
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    €197.00

  • IEEE/IEC 62860-1:2013

    IEC/IEEE Test methods for the characterization of organic transistor-based ring oscillators
    7/30/2013 - Paper - English -
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    €167.00

  • IEEE/IEC 62860:2013

    IEC/IEEE Test methods for the characterization of organic transistors and materials
    7/30/2013 - Paper - English -
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    €248.00

  • IEEE/IEC 62860-1:2013

    IEC/IEEE Test methods for the characterization of organic transistor-based ring oscillators
    7/30/2013 - PDF - English -
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    €139.00

  • IEC 60747-4:2007/AMD1:2017

    IEC 60747-4:2007/AMD1:2017 Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
    1/30/2017 - PDF - English, French -
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    €23.00

  • IEC 60747-4:2007+AMD1:2017 Edition 2.1

    IEC 60747-4:2007+AMD1:2017 (Consolidated version) Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
    1/30/2017 - PDF - English, French -
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    €610.00

  • 17/30366375 DC:2017

    BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) Part 1. Fast BTI Test method
    11/30/2017 - PDF - English -
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    €24.00

  • 18/30381548 DC:2018

    BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) Part 1. Fast BTI Test method
    8/3/2018 - PDF - English -
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    €24.00

  • IEC 60747-7:2010/AMD1:2019

    IEC 60747-7:2010/AMD1:2019 Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
    9/23/2019 - PDF - English, French -
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    €12.00

  • IEC 60747-7:2010+AMD1:2019 Edition 3.1

    IEC 60747-7:2010+AMD1:2019 (Consolidated version) Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
    9/23/2019 - PDF - English, French -
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    €558.00

  • BS IEC 60747-7:2010+A1:2019

    Semiconductor devices. Discrete devices Bipolar transistors
    10/23/2019 - PDF - English -
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    €398.00

  • IEC 60747-9:2019

    IEC 60747-9:2019 Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
    11/13/2019 - PDF - English, French -
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    €397.00

  • BS IEC 60747-9:2019

    Semiconductor devices Discrete devices. Insulated-gate bipolar transistors (IGBTs)
    11/22/2019 - PDF - English -
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    €377.00

  • 20/30406234 DC:2020

    BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Part 2. Test bipolar degradation by body diode operating
    4/1/2020 - PDF - English -
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    €24.00

  • BS IEC 60747-4:2007+A1:2017

    Semiconductor devices. Discrete devices Microwave diodes and transistors
    5/26/2020 - PDF - English -
    Learn More
    €449.00

  • IEC 62899-503-1:2020

    IEC 62899-503-1:2020 Printed electronics - Part 503-1: Quality assessment - Test method of displacement current measurement for printed thin-film transistor
    5/27/2020 - PDF - English -
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    €92.00

  • IEC 62373-1:2020

    IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
    7/15/2020 - PDF - English, French -
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    €173.00

  • BS IEC 62899-503-1:2020

    Printed electronics Quality assessment. Test method of displacement current measurement for printed thin-film transistor
    9/25/2020 - PDF - English -
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    €180.00

  • IEC 60747-8:2010+AMD1:2021 Edition 3.1

    IEC 60747-8:2010+AMD1:2021 (Consolidated version) Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
    6/25/2021 - PDF - English -
    Learn More
    €558.00

  • IEC 60747-8:2010/AMD1:2021

    IEC 60747-8:2010/AMD1:2021 Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
    6/25/2021 - PDF - English -
    Learn More
    €46.00

  • BS IEC 60747-8:2010+A1:2021

    Semiconductor devices. Discrete devices Field-effect transistors
    7/9/2021 - PDF - English -
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    €377.00

  • IEC 62899-503-3:2021

    IEC 62899-503-3:2021 Printed electronics - Part 503-3: Quality assessment - Measuring method of contact resistance for the printed thin film transistor - Transfer length method
    8/24/2021 - PDF - English -
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    €92.00

  • BS IEC 62899-503-3:2021

    Printed electronics Quality assessment. Measuring method of contact resistance for the printed thin film transistor. Transfer length
    9/8/2021 - PDF - English -
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    €180.00

  • NF EN IEC 63373, C96-373 (03/2022)

    Lignes directrices pour les méthodes d'essai de résistance dynamique à l'état passant des dispositifs de conversion de puissance fondés sur les HEMT en GaN
    3/1/2022 - Paper - French -
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    €88.33

  • IEC 63275-1:2022

    IEC 63275-1:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
    4/21/2022 - PDF - English, French -
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    €92.00

  • IEC 63284:2022

    IEC 63284:2022 Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
    4/21/2022 - PDF - English, French -
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    €92.00

  • IEC 63275-2:2022

    IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
    5/11/2022 - PDF - English, French -
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    €46.00

  • BS IEC 63275-1:2022

    Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Test bias temperature instability
    10/5/2022 - PDF - English -
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    €180.00

  • BS IEC 63284:2022

    Semiconductor devices. Reliability test method by inductive load switching for gallium nitride transistors
    11/11/2022 - PDF - English -
    Learn More
    €180.00

  • BS IEC 62373-1:2020

    Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) Fast BTI MOSFET
    3/30/2023 - PDF - English -
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    €250.00

  • DIN EN IEC 63373:2023-08

    Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices (IEC 63373:2022), German version EN IEC 63373:2022
    8/1/2023 - PDF - German -
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    €85.79

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