31.080.30 : Transistors

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  • BS IEC 60747-9:2019

    Semiconductor devices Discrete devices. Insulated-gate bipolar transistors (IGBTs)
    11/22/2019 - PDF - English - BSI
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    €324.69

  • IEC 60747-9:2019

    IEC 60747-9:2019 Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
    11/13/2019 - PDF - English, French - IEC
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    €315.00

  • BS IEC 60747-7:2010+A1:2019

    Semiconductor devices. Discrete devices Bipolar transistors
    10/23/2019 - PDF - English - BSI
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    €346.02

  • IEC 60747-7:2010+AMD1:2019 Edition 3.1

    IEC 60747-7:2010+AMD1:2019 (Consolidated version) Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
    9/23/2019 - PDF - English, French - IEC
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    €457.00

  • IEC 60747-7:2010/AMD1:2019

    IEC 60747-7:2010/AMD1:2019 Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
    9/23/2019 - PDF - English, French - IEC
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    €10.00

  • 19/30389766 DC:2019

    BS IEC 60747-8 AMD1. Semiconductor devices. Discrete devices Part 8. Field-effect transistors
    7/24/2019 - PDF - English - BSI
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    €23.70

  • 18/30381548 DC:2018

    BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) Part 1. Fast BTI Test method
    8/3/2018 - PDF - English - BSI
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    €23.70

  • BS IEC 60747-4:2007+A1:2017

    Semiconductor devices. Discrete devices Microwave diodes and transistors
    7/31/2018 - PDF - English - BSI
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    €388.68

  • 17/30366375 DC:2017

    BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) Part 1. Fast BTI Test method
    11/30/2017 - PDF - English - BSI
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    €23.70

  • IEC 60747-4:2007/AMD1:2017

    IEC 60747-4:2007/AMD1:2017 Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
    1/30/2017 - PDF - English, French - IEC
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    €20.00

  • IEC 60747-4:2007+AMD1:2017 Edition 2.1

    IEC 60747-4:2007+AMD1:2017 (Consolidated version) Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
    1/30/2017 - PDF - English, French - IEC
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    €457.00

  • IEEE/IEC 62860:2013

    IEC/IEEE Test methods for the characterization of organic transistors and materials
    7/30/2013 - PDF - English - IEEE
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    €185.18

  • IEEE/IEC 62860:2013

    IEC/IEEE Test methods for the characterization of organic transistors and materials
    7/30/2013 - Paper - English - IEEE
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    €232.18

  • IEEE/IEC 62860-1:2013

    IEC/IEEE Test methods for the characterization of organic transistor-based ring oscillators
    7/30/2013 - PDF - English - IEEE
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    €130.66

  • IEEE/IEC 62860-1:2013

    IEC/IEEE Test methods for the characterization of organic transistor-based ring oscillators
    7/30/2013 - Paper - English - IEEE
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    €156.98

  • BS IEC 60747-8:2010

    Semiconductor devices. Discrete devices Field-effect transistors
    6/30/2011 - PDF - English - BSI
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    €324.69

  • ASTM F996-11(2018)

    Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics
    1/1/2011 - PDF - English - ASTM
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    €47.00

  • IEC 60747-7:2010

    IEC 60747-7:2010 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
    12/16/2010 - PDF - English, French - IEC
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    €335.00

  • IEC 60747-8:2010

    IEC 60747-8:2010 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
    12/15/2010 - PDF - English, French - IEC
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    €315.00

  • DIN EN 62416:2010-12

    Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010
    12/1/2010 - PDF - German - DIN
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    €75.40

  • NF EN 62416, C80-202 (11/2010)

    Semiconductor devices - Hot carrier test on MOS transistors - Dispositifs à semiconducteurs
    11/1/2010 - Paper - French - AFNOR
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    €74.67

  • NF EN 62417, C80-203 (11/2010)

    Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) - Dispositifs à semiconducteurs
    11/1/2010 - Paper - French - AFNOR
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    €60.85

  • BS EN 62416:2010

    Semiconductor devices. Hot carrier test on MOS transistors
    7/31/2010 - PDF - English - BSI
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    €130.35

  • BS EN 62417:2010

    Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
    6/30/2010 - PDF - English - BSI
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    €130.35

  • IEC 62416:2010

    IEC 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
    4/26/2010 - PDF - English, French - IEC
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    €41.00

  • IEC 62417:2010

    IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
    4/22/2010 - PDF - English, French - IEC
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    €20.00

  • IEEE 1620:2008

    IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials
    12/5/2008 - PDF - English - IEEE
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    €86.48

  • IEEE 1620:2008 + Redline

    IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials
    12/5/2008 - PDF - English - IEEE
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    €117.50

  • IEC 60747-4:2007

    IEC 60747-4:2007 Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
    8/23/2007 - PDF - English, French - IEC
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    €345.00

  • DIN EN 62373:2007-01

    Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
    1/1/2007 - PDF - German - DIN
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    €68.30

  • IEEE 1620.1:2006 (R2012)

    IEEE Standard for Test Methods for the Characterization of Organic Transistor-Based Ring Oscillators
    11/8/2006 - PDF - English - IEEE
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    €77.08

  • IEEE 1620.1:2006 (R2012)

    IEEE Standard for Test Methods for the Characterization of Organic Transistor-Based Ring Oscillators
    11/8/2006 - Paper - English - IEEE
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    €91.18

  • UNE-EN 62373:2006

    Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)
    11/1/2006 - PDF - English - AENOR
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    €60.00

  • BS EN 62373:2006

    Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
    9/29/2006 - PDF - English - BSI
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    €154.05

  • IEC 62373:2006

    IEC 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
    7/18/2006 - PDF - English, French - IEC
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    €71.00

  • BS IEC 60747-8-4:2004

    Discrete semiconductor devices Metal-oxide field-effect transistors (MOSFETs) for power switching applications
    11/9/2004 - PDF - English - BSI
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    €300.99

  • BS QC 750114:1996

    Harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for case-rated field-effect transistors for switching applications
    12/15/1996 - PDF - English - BSI
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    €154.05

  • DIN EN 120003:1996-11

    Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992
    11/1/1996 - PDF - German - DIN
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    €54.80

  • UNE-EN 150012:1991

    BDS: SINGLE GATE FIELD-EFFECT TRANSISTORS. (Endorsed by AENOR in November of 1996.)
    11/1/1996 - PDF - English - AENOR
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    €95.00

  • UNE-EN 150007:1991

    BDS: CASE-RATED BIPOLAR TRANSISTORS FOR HIGH FREQUENCY AMPLIFICATION. (Endorsed by AENOR in November of 1996.)
    11/1/1996 - PDF - English - AENOR
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    €46.00

  • UNE-EN 150003:1991

    BDS: CASE-RATED BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION. (Endorsed by AENOR in November of 1996.)
    11/1/1996 - PDF - English - AENOR
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    €28.00

  • UNE-EN 150004:1991

    BDS: BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS. (Endorsed by AENOR in November of 1996.)
    11/1/1996 - PDF - English - AENOR
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    €46.00

  • UNE-EN 120003:1992

    BDS: PHOTOTRANSISTORS, PHOTOCARLINGTON TRANSISTORS, PHOTOTRANSISTOR ARRAYS. (Endorsed by AENOR in September of 1996.)
    9/1/1996 - PDF - English - AENOR
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    €46.00

  • UNE-EN 120004:1992

    BDS: AMBIENT RATED PHOTOCOUPLERS WITH PHOTOTRANSISTORS OUTPUT. (Endorsed by AENOR in September of 1996.)
    9/1/1996 - PDF - English - AENOR
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    €60.00

  • BS QC 750106:1993

    Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications
    7/15/1993 - PDF - English - BSI
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    €154.05

  • JIS C 7030:1993 (R2014)

    Measuring methods for transistors
    2/1/1993 - PDF - Japanese - JSA
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    €50.18

  • NF EN 120003, C93-120-003 (07/1992)

    Spécification Particulière Cadre : phototransistors, transistors photodarlington, réseaux de phototransistors - Spécification Particulière Cadre: Phototransistors, transistors photodarlington, réseaux de phototransistors
    7/1/1992 - Paper - French - AFNOR
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    €74.67

  • NF C96-007 (06/1989)

    Semiconductor devices. Discrete devices and integrated circuits. Part 7 : bipolar transistors. - Composants électroniques
    6/1/1989 - Paper - French - AFNOR
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    €185.29

  • BS EN 120004:1993

    Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Ambient rated photocouplers with phototransistor output
    5/15/1988 - PDF - English - BSI
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    €215.67

  • UTE C86-614/A10, C86-614/A10U (04/1987)

    Additif 10 à la publication UTE C 86-614 de février 1977
    4/1/1987 - Paper - French - AFNOR
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    €60.85

  • BS EN 120003:1993

    Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays
    11/15/1986 - PDF - English - BSI
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    €154.05

  • UTE C86-614/A9, C86-614/A9U (03/1986)

    Additif 9 à la publication UTE C 86-614 de février 1977
    3/1/1986 - Paper - French - AFNOR
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    €107.86

  • UTE C86-614/A8, C86-614/A8U (05/1981)

    ELECTRONIC COMPONENTS. BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS. COLLECTION OF DETAILS SPECIFICATIONS WITHIN THE SCOPE OF THE FRENCH STANDARDS NF C 86-010 AND NF C 86-614 (CECC 50 000 AND CECC 50 004).
    5/1/1981 - Paper - French - AFNOR
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    €107.86

  • UTE C86-614/A7, C86-614/A7U (01/1981)

    Additif 7 à la publication UTE C 86-614 de février 1977
    1/1/1981 - Paper - French - AFNOR
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    €26.54

  • UTE C86-614/A6, C86-614/A6U (01/1980)

    Additif 6 à la publication UTE C 86-614 de février 1977
    1/1/1980 - Paper - French - AFNOR
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    €74.67

  • UTE C86-614/A5, C86-614/A5U (08/1979)

    Additif 5 à la publication UTE C 86-614 de février 1977
    8/1/1979 - Paper - French - AFNOR
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    €74.67

  • UTE C86-614/A2, C86-614/A2U (11/1978)

    ELECTRONIC COMPONENTS. BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS. COLLECTION OF DETAIL SPECIFICATION WITHIN THE SCOPE OF THE FRENCH STANDARDS NF C 86-010 AND NF C 86-614.
    11/1/1978 - Paper - French - AFNOR
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    €98.42

  • UTE C86-614/A1, C86-614/A1U (04/1978)

    ELECTRONIC COMPONENTS. BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS. COLLECTION OF DETAIL SPECIFICATION WITHIN THE SCOPE OF THE FRENCH STANDARDS NF C 86-010 AND NF C 86-614.
    4/1/1978 - Paper - French - AFNOR
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    €60.85

  • UTE C86-614, C86-614U (02/1977)

    Electronic components. Bipolar transistors for switching applications. Manual of detail specifications within the scope of the french standards NF C 86-010 and NF C 86-614 (CECC 50 000 and CECC 50 004). - Composants électroniques
    2/1/1977 - Paper - French - AFNOR
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    €74.67

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