DIN 51456:2013-10

DIN 51456:2013-10

Testing of materials for semiconductor technology - Surface analysis of silicon wafers by multielement determination in aqueous analysis solutions using mass spectrometry with inductively coupled plasma (ICP-MS)

Availability: In stock

€65.89

Details

This document specifies a test method for surface analysis for the determination of mass fractions of the elements Al (aluminum), As (arsenic), Ba (barium), Be (beryllium), Ca (calcium), Cd (cadmium), Co (cobalt), Cr (chromium), Cu (copper) , Fe (iron), In (indium), K (potassium), Li (lithium), Mg (magnesium), Mn (manganese), Mo (molybdenum), Na (sodium), Ni (nickel), Pb (lead) , Sb (antimony), Sr (strontium), Ti (titanium), V (vanadium), Zn (zinc) and Zr (zirconium) on silicon wafers using ICP-MS.

Additional Info

Author Deutsche Institut für Normung e.V. (DIN)
Published by DIN
Document type Standard
ICS 31.200 : Integrated circuits. Microelectronics
Number of pages 15
Document history DIN 51456 (2013-10),DIN 51456 (2012-10)
Keyword DIN 51456