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31.080.30 : Transistors

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  • IEC 60747-4 AMD 1 (2017-01)

    IEC 60747-4:2007/AMD1:2017 Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
    1/30/2017 - PDF - English, French - CEI
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    €20.00

  • IEC 60747-4 Edition 2.1 (2017-01)

    IEC 60747-4:2007+AMD1:2017 consolidated version Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
    1/30/2017 - PDF - English, French - CEI
    Learn More
    €457.00

  • IEEE 62860:2013

    IEC/IEEE Test methods for the characterization of organic transistors and materials
    1/1/2013 - PDF - English - IEEE
    Learn More
    €178.20

  • IEEE 62860-1:2013

    IEC/IEEE Test methods for the characterization of organic transistor-based ring oscillators
    1/1/2013 - PDF - English - IEEE
    Learn More
    €124.74

  • BS IEC 60747-8:2010

    Semiconductor devices. Discrete devices. Field-effect transistors
    6/30/2011 - PDF - English - BSI
    Learn More
    €303.60

  • BS IEC 60747-7:2010

    Semiconductor devices. Discrete devices. Bipolar transistors
    2/28/2011 - PDF - English - BSI
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    €312.80

  • ASTM F996-11 + Redline

    Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
    1/1/2011 - PDF - English - ASTM
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    €47.00

  • ASTM F996-11(2018)

    Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics
    1/1/2011 - PDF - English - ASTM
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    €43.00

  • IEC 60747-7 (2010-12)

    IEC 60747-7:2010 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
    12/16/2010 - PDF - English, French - CEI
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    €325.00

  • IEC 60747-8 (2010-12)

    IEC 60747-8:2010 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
    12/15/2010 - PDF - English, French - CEI
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    €305.00

  • DIN EN 62416:2010-12

    Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010
    12/1/2010 - PDF - German - DIN
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    €75.40

  • NF C80-202, NF EN 62416 (11/2010)

    Semiconductor devices - Hot carrier test on MOS transistors
    11/1/2010 - PDF - French - UTE
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    €77.83

  • NF C80-203, NF EN 62417 (11/2010)

    Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
    11/1/2010 - PDF - French - UTE
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    €63.42

  • BS EN 62416:2010

    Semiconductor devices. Hot carrier test on MOS transistors
    7/31/2010 - PDF - English - BSI
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    €121.90

  • BS EN 62417:2010

    Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
    6/30/2010 - PDF - English - BSI
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    €121.90

  • IEC 62416 (2010-04)

    IEC 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
    4/26/2010 - PDF - English, French - CEI
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    €41.00

  • IEC 62417 (2010-04)

    IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
    4/22/2010 - PDF - English, French - CEI
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    €20.00

  • BS IEC 60747-4:2007+A1:2017

    Semiconductor devices. Discrete devices. Microwave diodes and transistors
    2/29/2008 - PDF - English - BSI
    Learn More
    €351.90

  • BS IEC 60747-9:2007

    Semiconductor devices. Discrete devices. Insulated-gate bipolar transistors (IGBTs)
    11/30/2007 - PDF - English - BSI
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    €282.90

  • IEC 60747-9 (2007-09)

    IEC 60747-9:2007 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
    9/26/2007 - PDF - English, French - CEI
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    €274.00

  • IEC 60747-4 (2007-08)

    IEC 60747-4:2007 Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
    8/23/2007 - PDF - English, French - CEI
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    €335.00

  • DIN EN 62373:2007-01

    Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
    1/1/2007 - PDF - German - DIN
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    €68.30

  • UNE-EN 62373:2006

    Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)
    11/1/2006 - PDF - English - AENOR
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    €65.00

  • BS EN 62373:2006

    Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
    9/29/2006 - PDF - English - BSI
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    €144.90

  • IEC 62373 (2006-07)

    IEC 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
    7/18/2006 - PDF - English, French - CEI
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    €71.00

  • BS IEC 60747-8-4:2004

    Discrete semiconductor devices. Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
    11/9/2004 - PDF - English - BSI
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    €282.90

  • EIA JEP 84A:2004

    Recommend Practice for Measurement of Transistor Lead Temperature
    6/1/2004 - PDF sécurisé - English - EIA
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    €36.08

  • EIA JEP 147:2003

    Procedure for Measuring Input Capacitance Using a Vector Network Analyzer (VNA)
    10/1/2003 - PDF sécurisé - English - EIA
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    €36.08

  • BS QC 750114:1996

    Harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for case-rated field-effect transistors for switching applications
    12/15/1996 - PDF - English - BSI
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    €144.90

  • DIN EN 120003:1996-11

    Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992
    11/1/1996 - PDF - German - DIN
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    €54.80

  • UNE-EN 150012:1991

    BDS: SINGLE GATE FIELD-EFFECT TRANSISTORS. (Endorsed by AENOR in November of 1996.)
    11/1/1996 - PDF - English - AENOR
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    €105.00

  • UNE-EN 150003:1991

    BDS: CASE-RATED BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION. (Endorsed by AENOR in November of 1996.)
    11/1/1996 - PDF - English - AENOR
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    €30.00

  • UNE-EN 150004:1991

    BDS: BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS. (Endorsed by AENOR in November of 1996.)
    11/1/1996 - PDF - English - AENOR
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    €50.00

  • UNE-EN 150007:1991

    BDS: CASE-RATED BIPOLAR TRANSISTORS FOR HIGH FREQUENCY AMPLIFICATION. (Endorsed by AENOR in November of 1996.)
    11/1/1996 - PDF - English - AENOR
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    €50.00

  • UNE-EN 120003:1992

    BDS: PHOTOTRANSISTORS, PHOTOCARLINGTON TRANSISTORS, PHOTOTRANSISTOR ARRAYS. (Endorsed by AENOR in September of 1996.)
    9/1/1996 - PDF - English - AENOR
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    €50.00

  • UNE-EN 120004:1992

    BDS: AMBIENT RATED PHOTOCOUPLERS WITH PHOTOTRANSISTORS OUTPUT. (Endorsed by AENOR in September of 1996.)
    9/1/1996 - PDF - English - AENOR
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    €65.00

  • BS QC 750106:1993

    Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications
    7/15/1993 - PDF - English - BSI
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    €144.90

  • JIS C 7030:1993 (R2014)

    Measuring methods for transistors
    2/1/1993 - PDF - Japanese - JSA
    Learn More
    €50.18

  • EIA JESD 24-7:1992 (R2002)

    Commutating Diode Safe Operating Area Test Procedure for Measuring DV/DT During Reverse Recovery of Power Transistors
    8/1/1992 - PDF sécurisé - English - EIA
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    €35.20

  • EIA JES 2:1992

    Transistor, Gallium Arsenide Power Fet, Generic Specification
    1/1/1992 - PDF sécurisé - English - EIA
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    €62.48

  • EIA JESD 24-6:1991 (R2002)

    Thermal Impedance Measurements for Insulated Gate Bipolar Transistors
    10/1/1991 - PDF sécurisé - English - EIA
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    €41.36

  • EIA JESD 24-4:1990 (R2002)

    Thermal Impedance Measurements for Bipolar Transistors (Delta Base- Emitter Voltage Method)
    11/1/1990 - PDF sécurisé - English - EIA
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    €41.36

  • NF C96-007 (06/1989) (R2014)

    Semiconductor devices. Discrete devices and integrated circuits. Part 7 : bipolar transistors.
    6/1/1989 - PDF - French - UTE
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    €193.11

  • DIN 4000-19:1988-12

    Tabular layouts of article characteristics for transistors and thyristors
    12/1/1988 - PDF - German - DIN
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    €33.60

  • BS EN 120004:1993

    Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Ambient rated photocouplers with phototransistor output
    5/15/1988 - PDF - English - BSI
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    €202.40

  • NF C86-612/A2 (11/1987) (R2012)

    Harmonised system of quality assessment for electronic components. Blank detail specification : ambient-rated bipolar transistors for amplification.
    11/1/1987 - PDF - French - UTE
    Learn More
    €35.75

  • €149.88

  • BS EN 120003:1993

    Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays
    11/15/1986 - PDF - English - BSI
    Learn More
    €144.90

  • €112.42

  • EIA JESD 311A:1981 (R2009)

    Measurement of Transistor Noise Figure at MF, HF, and VHF
    11/1/1981 - PDF sécurisé - English - EIA
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    €42.24

  • UTE C86-614/A8U, UTE C86-614/A8 (05/1981)

    ELECTRONIC COMPONENTS. BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS. COLLECTION OF DETAILS SPECIFICATIONS WITHIN THE SCOPE OF THE FRENCH STANDARDS NF C 86-010 AND NF C 86-614 (CECC 50 000 AND CECC 50 004).
    5/1/1981 - PDF - French - UTE
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    €112.42

  • €27.67

  • €77.83

  • UTE C86-614/A5U, UTE C86-614/A5 (08/1979)


    8/27/1979 - PDF - French - UTE
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    €77.83

  • UTE C86-614/A2U, UTE C86-614/A2 (11/1978)

    ELECTRONIC COMPONENTS. BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS. COLLECTION OF DETAIL SPECIFICATION WITHIN THE SCOPE OF THE FRENCH STANDARDS NF C 86-010 AND NF C 86-614.
    11/6/1978 - PDF - French - UTE
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    €102.58

  • UTE C86-614/A1U, UTE C86-614/A1 (04/1978)

    ELECTRONIC COMPONENTS. BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS. COLLECTION OF DETAIL SPECIFICATION WITHIN THE SCOPE OF THE FRENCH STANDARDS NF C 86-010 AND NF C 86-614.
    4/21/1978 - PDF - French - UTE
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    €63.42

  • UTE C86-614U, UTE C86-614 (02/1977)

    Electronic components. Bipolar transistors for switching applications. Manual of detail specifications within the scope of the french standards NF C 86-010 and NF C 86-614 (CECC 50 000 and CECC 50 004).
    2/22/1977 - PDF - French - UTE
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    €77.83

  • EIA JESD 435:1976 (R2009)

    Standard for the Measurement of Small-Signal Transistor Scattering Parameters
    4/1/1976 - PDF sécurisé - English - EIA
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    €43.12

  • EIA JESD 10:1976 (R2002)

    Low Frequency Power Transistors
    1/1/1976 - PDF sécurisé - English - EIA
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    €129.36

  • EIA JESD 313B:1975 (R2001)

    Conduction Cooled Power Transistors, Thermal Resistance Measurements of
    10/1/1975 - PDF sécurisé - English - EIA
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    €39.60

  • EIA JEP 69-B:1973 (R1999)

    Preferred Lead Configurations for Field-Effect Transistors
    1/1/1973 - PDF sécurisé - English - EIA
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    €33.44

  • EIA JESD 25:1972 (R2002)

    Measurement of Small-Signal Transistor Scattering Parameters
    11/1/1972 - PDF sécurisé - English - EIA
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    €50.16

  • EIA JESD 398:1972 (R2009)

    Measurement of Small Values of Transistor Capacitance
    7/1/1972 - PDF sécurisé - English - EIA
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    €37.84

  • EIA JESD 372:1970 (R2009)

    The Measurement of Small-Signal VHF-UHF Transistor Admittance Parameters
    5/1/1970 - PDF sécurisé - English - EIA
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    €37.84

  • EIA JESD 371:1970 (R2009)

    Measurement of Small-Signal VHF-UHF Transistor Short-Circuit Forward Current Transfer Ratio
    2/1/1970 - PDF sécurisé - English - EIA
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    €36.08

  • EIA JESD 353:1968 (R2009)

    The Measurement of Transistor Noise Figure at Frequencies up to 20 kHz by Sinusoidal Signal-Generator Method
    4/1/1968 - PDF sécurisé - English - EIA
    Learn More
    €35.20

  • EIA JESD 354:1968 (R2009)

    The Measurement of Transistor Equivalent Noise Voltage and Equivalent Noise Current at Frequencies of up to 20 kHz
    4/1/1968 - PDF sécurisé - English - EIA
    Learn More
    €35.20

  • EIA JESD 6:1967 (R2002)

    Measurement of Small Values of Transistor Capacitance
    2/1/1967 - PDF sécurisé - English - EIA
    Learn More
    €41.36

  • EIA JEP 65:1967 (R1999)

    Verification of Maximum Ratings of Power Transistors, Test Procedures for
    1/1/1967 - PDF sécurisé - English - EIA
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    €45.76

  • EIA JESD 306:1965 (R2009)

    Measurement of Small Signal HF, VHF, and UHF Power Gain of Transistors
    5/1/1965 - PDF sécurisé - English - EIA
    Learn More
    €33.44

  • EIA JESD 302:1965 (R2009)

    Ranges and Conditions for Specifying Beta for Low Power, Audio Frequency Transistors for Entertainment Service
    1/1/1965 - PDF sécurisé - English - EIA
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    €32.56

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